2SB1260-P Répertoire mondial des transistors gratuit

 

2SB1260-P - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: 2SB1260-P

Marquage: BEP

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 0.5

Tension collecteur–base (maximale) Vcb: 80

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 80

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 1

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 100

Capacite collecteur (Cc), pF: 25

Gain en courant DC hFE (hfe): 82

Boitier: SOT89

Recherche équivalences (un remplaçant pour le transistor 2SB1260-P )

2SB1260-P Datasheet (PDF)

1.1. 2sb1260-p.pdf Size:50K _update

2SB1260-P

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

2.1. 2sb1260-r.pdf Size:50K _update

2SB1260-P

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

2.2. 2sb1260-q.pdf Size:50K _update

2SB1260-P

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

D'autres types de transistors... 2SB1216S-E , 2SB1216S-H , 2SB1216S-TL-E , 2SB1216S-TL-H , 2SB1216T-E , 2SB1216T-H , 2SB1216T-TL-E , 2SB1216T-TL-H , BD135 , 2SB1260-Q , 2SB1260-R , 2SB1302S-TD-E , 2SB1302T-TD-E , 2SB1308-P , 2SB1308-Q , 2SB1308-R , 2SB975-220 .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT MJE13003DK3 | MJE13003DK1 | MJE13003DI5 | MJE13003DI3 | MJE13003DI1 | MJE13003DG5 | MJE13003DG1 | MJE13002VH1 | MJE13002I7 | MJE13002I6 | MJE13002I5 | MJE13002H6 | MJE13002H5 | MJE13002H1 | MJE13002G6 | MJE13002G5 | MJE13002G2 | MJE13002G1 | MJE13002G | MJE13002F6 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché