MJL21195G Répertoire mondial des transistors gratuit

 

MJL21195G - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: MJL21195G

Marquage: MJL21195

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 200

Tension collecteur–base (maximale) Vcb: 400

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 250

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 16

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 4

Capacite collecteur (Cc), pF: 500

Gain en courant DC hFE (hfe): 25

Boitier: TO264

Recherche équivalences (un remplaçant pour le transistor MJL21195G )

MJL21195G Datasheet (PDF)

1.1. mjl21195g.pdf Size:123K _update

MJL21195G
MJL21195G

MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com • Total Harmonic Distortion Characterized • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY • Excellent Gain Linearity

2.1. mjl21195_mjl21196.pdf Size:126K _onsemi

MJL21195G
MJL21195G

MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY Excellent Gain Linearity SILICON

3.1. mjl21196g.pdf Size:123K _update

MJL21195G
MJL21195G

MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com • Total Harmonic Distortion Characterized • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc 16 A COMPLEMENTARY • Excellent Gain Linearity

3.2. mjl21193g.pdf Size:120K _update

MJL21195G
MJL21195G

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY • High DC Current Gain SILICON POWER • Excellent Gain Linea

3.3. mjl21194g.pdf Size:120K _update

MJL21195G
MJL21195G

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized 16 AMPERE COMPLEMENTARY • High DC Current Gain SILICON POWER • Excellent Gain Linea

3.4. mjl21193_mjl21194.pdf Size:159K _motorola

MJL21195G
MJL21195G

Order this document MOTOROLA by MJL21193/D SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN Silicon Power Transistors * MJL21194 The MJL21193 and MJL21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY Total Harmonic Distortion Character

3.5. mjl21193_mjl21194.pdf Size:127K _onsemi

MJL21195G
MJL21195G

MJL21193, MJL21194 Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC 16 AMPERE COMPLEMENTARY = 8 Adc SILICON POWER Excellent Ga

3.6. mjl21194.pdf Size:224K _inchange_semiconductor

MJL21195G
MJL21195G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJL21194 DESCRIPTION ·Total Harmonic Distortion Characterized ·High DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitte

3.7. mjl21193.pdf Size:224K _inchange_semiconductor

MJL21195G
MJL21195G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJL21193 DESCRIPTION ·Total Harmonic Distortion Characterized ·High DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitte

D'autres types de transistors... MJH16010A , MJH16012 , MJH16018 , MJH6284G , MJH6287G , MJL1302AG , MJL21193G , MJL21194G , 2SC945 , MJL21196G , MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , MJW21191 , MJW21192 , MJW21193G .

 


MJL21195G
  MJL21195G
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MJL21195G
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  MJL21195G
 

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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT 3DF05 | 3DD9E | 3DD9D | 3DD99 | 3DD9 | 3DD8E | 3DD831 | 3DD820 | 3DD810 | 3DD8 | 3DD7525A3 | 3DD742A8 | 3DD741A8 | 3DD741A4 | 3DD73 | 3DD71 | 3DD7 | 3DD6E-T | 3DD69 | 3DD68 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché