MJW21191 Répertoire mondial des transistors gratuit

 

MJW21191 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: MJW21191

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 100

Tension collecteur–base (maximale) Vcb: 150

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 150

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 8

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 4

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 15

Boitier: TO247_TO3PN

Recherche équivalences (un remplaçant pour le transistor MJW21191 )

MJW21191 Datasheet (PDF)

1.1. mjw21191.pdf Size:111K _update

MJW21191
MJW21191

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION ·With TO-247 package ·Complement to type MJW21192 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

1.2. mjw21192_mjw21191.pdf Size:150K _motorola

MJW21191
MJW21191

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 AMPERES TO

1.3. mjw21192_mjw21191.pdf Size:155K _onsemi

MJW21191
MJW21191

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages are Available

1.4. mjw21191.pdf Size:227K _inchange_semiconductor

MJW21191
MJW21191

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJW21191 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage -150 V VCEO Collector-Emitter Voltage -150 V

D'autres types de transistors... MJL21193G , MJL21194G , MJL21195G , MJL21196G , MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , BC549 , MJW21192 , MJW21193G , MJW21194G , MJW21195G , MJW21196G , MJW3281AG , 3CD010 , 3CD020 .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT 3DF05 | 3DD9E | 3DD9D | 3DD99 | 3DD9 | 3DD8E | 3DD831 | 3DD820 | 3DD810 | 3DD8 | 3DD7525A3 | 3DD742A8 | 3DD741A8 | 3DD741A4 | 3DD73 | 3DD71 | 3DD7 | 3DD6E-T | 3DD69 | 3DD68 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché