MJW21192 Répertoire mondial des transistors gratuit

 

MJW21192 - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: MJW21192

Matériau utilisé: Si

Polarité du transistor: NPN

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 100

Tension collecteur–base (maximale) Vcb: 150

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 150

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 8

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 4

Capacite collecteur (Cc), pF:

Gain en courant DC hFE (hfe): 15

Boitier: TO247

Recherche équivalences (un remplaçant pour le transistor MJW21192 )

MJW21192 Datasheet (PDF)

1.1. mjw21192.pdf Size:110K _update

MJW21192
MJW21192

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION ·With TO-247 package ·Complement to type MJW21191 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

1.2. mjw21192_mjw21191.pdf Size:150K _motorola

MJW21192
MJW21192

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 AMPERES TO

1.3. mjw21192_mjw21191.pdf Size:155K _onsemi

MJW21192
MJW21192

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages are Available

1.4. mjw21192.pdf Size:227K _inchange_semiconductor

MJW21192
MJW21192

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJW21192 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 150 V V

D'autres types de transistors... MJL21194G , MJL21195G , MJL21196G , MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , MJW21191 , BC148 , MJW21193G , MJW21194G , MJW21195G , MJW21196G , MJW3281AG , 3CD010 , 3CD020 , 3CD030 .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT 3DF05 | 3DD9E | 3DD9D | 3DD99 | 3DD9 | 3DD8E | 3DD831 | 3DD820 | 3DD810 | 3DD8 | 3DD7525A3 | 3DD742A8 | 3DD741A8 | 3DD741A4 | 3DD73 | 3DD71 | 3DD7 | 3DD6E-T | 3DD69 | 3DD68 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché