MJW21195G Répertoire mondial des transistors gratuit

 

MJW21195G - Les principales caractéristique des transistors bipolaires. Caractéristiques techniques. Répertoire mondial des transistors

Type: MJW21195G

Marquage: MJW21195

Matériau utilisé: Si

Polarité du transistor: PNP

Puissance dissipable maximale pour une température du boitier de 25°C (Pc): 200

Tension collecteur–base (maximale) Vcb: 400

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 250

Tension émetteur–base (maximale) Veb: 5

Courant collecteur maximal (Ic): 16

Température maximale de jonction (Tj), °C: 150

Fréquence maximale de fonctionnement (fT): 4

Capacite collecteur (Cc), pF: 500

Gain en courant DC hFE (hfe): 20

Boitier: TO247

Recherche équivalences (un remplaçant pour le transistor MJW21195G )

MJW21195G Datasheet (PDF)

1.1. mjw21195g.pdf Size:153K _update

MJW21195G
MJW21195G

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features 16 AMPERES • Total Harmonic Distortion Characterized • High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY • Excell

2.1. mjw21195_mjw21196.pdf Size:157K _onsemi

MJW21195G
MJW21195G

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excellent Gain

3.1. mjw21193g.pdf Size:141K _update

MJW21195G
MJW21195G

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized 16 AMPERES • High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P

3.2. mjw21192.pdf Size:110K _update

MJW21195G
MJW21195G

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION ·With TO-247 package ·Complement to type MJW21191 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

3.3. mjw21196g.pdf Size:153K _update

MJW21195G
MJW21195G

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features 16 AMPERES • Total Harmonic Distortion Characterized • High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY • Excell

3.4. mjw21194g.pdf Size:141K _update

MJW21195G
MJW21195G

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized 16 AMPERES • High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P

3.5. mjw21191.pdf Size:111K _update

MJW21195G
MJW21195G

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION ·With TO-247 package ·Complement to type MJW21192 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

3.6. mjw21192_mjw21191.pdf Size:150K _motorola

MJW21195G
MJW21195G

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 AMPERES TO

3.7. mjw21192_mjw21191.pdf Size:155K _onsemi

MJW21195G
MJW21195G

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages are Available

3.8. mjw21193_mjw21194.pdf Size:145K _onsemi

MJW21195G
MJW21195G

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc POWER TR

3.9. mjw21192.pdf Size:227K _inchange_semiconductor

MJW21195G
MJW21195G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJW21192 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 150 V VCEO Collector-Emitter Voltage 150 V V

3.10. mjw21191.pdf Size:227K _inchange_semiconductor

MJW21195G
MJW21195G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJW21191 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage -150 V VCEO Collector-Emitter Voltage -150 V

D'autres types de transistors... MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , MJW21191 , MJW21192 , MJW21193G , MJW21194G , 2N2907 , MJW21196G , MJW3281AG , 3CD010 , 3CD020 , 3CD030 , 3CD050 , 3CD075 , 3CD1 .

 


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INDEX

Répertoire mondial rassemble environ 100 nouvelles references:

BJT 3DF05 | 3DD9E | 3DD9D | 3DD99 | 3DD9 | 3DD8E | 3DD831 | 3DD820 | 3DD810 | 3DD8 | 3DD7525A3 | 3DD742A8 | 3DD741A8 | 3DD741A4 | 3DD73 | 3DD71 | 3DD7 | 3DD6E-T | 3DD69 | 3DD68 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché