G12N50E1 IGBT. Datasheet pdf. Equivalent
Type Designator: G12N50E1
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 75W
Maximum Collector-Emitter Voltage |Vce|, V: 500V
Collector-Emitter saturation Voltage |Vcesat|, V: 4.5V
Maximum Gate-Emitter Voltage |Veg|, V: 20V
Maximum Collector Current |Ic|, A: 12A
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 50
Package: TO218
G12N50E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
G12N50E1 Datasheet (PDF)
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Datasheet: G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , IXGH40N60B2D1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D .
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IGBT: BSM50GP60 | BSM50GP120 | BSM50GD60DLC_E3226 | BSM50GD60DLC | BSM50GD170DL | BSM50GD120DN2G | BSM50GD120DN2E3226 | BSM50GD120DN2 | BSM50GD120DLC | BSM50GB60DLC |