G12N50E1 IGBT. Datasheet pdf. Equivalent
Type Designator: G12N50E1
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 75
Maximum Collector-Emitter Voltage |Vce|, V: 500
Collector-Emitter saturation Voltage |Vcesat|, V: 4.5
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 12
Maximum Junction Temperature (Tj), °C: 150
Package: TO218
G12N50E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
G12N50E1 Datasheet (PDF)
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Datasheet: G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , STGW45HF60WD , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D .



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IGBT: JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C