All IGBT. DG15X12T2 Datasheet

 

DG15X12T2 Datasheet and Replacement


   Type Designator: DG15X12T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 138 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247
      - IGBT Cross-Reference

 

DG15X12T2 Datasheet (PDF)

 ..1. Size:532K  cn starpower
 dg15x12t2.pdf pdf_icon

DG15X12T2

DG15X12T2 IGBT Discrete DOSEMI IGBT DG15X12T2 1200V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

 9.1. Size:339K  cn starpower
 dg15x06t1.pdf pdf_icon

DG15X12T2

DG15X06T1 IGBT Discrete DOSEMI IGBT DG15X06T1 600V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC

Datasheet: VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , RJH60F5DPQ-A0 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W .

History: IGA03N120H2 | IXGQ50N60C4D1 | IXGH24N60B | IXGQ20N120B | IGW40N60H3 | HGTG18N120BND

Keywords - DG15X12T2 transistor datasheet

 DG15X12T2 cross reference
 DG15X12T2 equivalent finder
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