DG15X12T2 IGBT. Datasheet pdf. Equivalent
Type Designator: DG15X12T2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 138 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 50 nS
Package: TO247
DG15X12T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DG15X12T2 Datasheet (PDF)
dg15x12t2.pdf
DG15X12T2 IGBT Discrete DOSEMI IGBT DG15X12T2 1200V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss
dg15x06t1.pdf
DG15X06T1 IGBT Discrete DOSEMI IGBT DG15X06T1 600V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC
Datasheet: VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , RJH3047 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P , SIG25N60W .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2