All IGBT. G12N50E1 Datasheet

 

G12N50E1 IGBT. Datasheet pdf. Equivalent

Type Designator: G12N50E1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO218

G12N50E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G12N50E1 Datasheet (PDF)

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Datasheet: G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , IXGH40N60B2D1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D .

 

 
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