All IGBT. IGW25T120 Datasheet

 

IGW25T120 Datasheet and Replacement


   Type Designator: IGW25T120
   Type: IGBT
   Marking Code: G25T120
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 96 pF
   Qgⓘ - Total Gate Charge, typ: 155 nC
   Package: TO247
      - IGBT Cross-Reference

 

IGW25T120 Datasheet (PDF)

 ..1. Size:349K  infineon
igw25t120.pdf pdf_icon

IGW25T120

IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT

 ..2. Size:349K  infineon
igw25t120 rev2 4g.pdf pdf_icon

IGW25T120

IGW25T120 TrenchStop Series Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT

 9.1. Size:2033K  infineon
igw25n120h3.pdf pdf_icon

IGW25T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

 9.2. Size:901K  infineon
igw25n120h3 .pdf pdf_icon

IGW25T120

IGBTHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120IGW25N120H31200V high speed switching series third generationData sheetIndustrial & MultimarketIGW25N120H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyrecommended in combination with SiC Diode IDH15S120Features: CTRENC

Datasheet: IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IKW50N60H3 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T .

History: IXSH30N60B2D1 | IXGP12N120A3 | FGH30S150P

Keywords - IGW25T120 transistor datasheet

 IGW25T120 cross reference
 IGW25T120 equivalent finder
 IGW25T120 lookup
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