All IGBT. IGP30N60T Datasheet

 

IGP30N60T IGBT. Datasheet pdf. Equivalent

Type Designator: IGP30N60T

Marking Code: G30T60

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 187

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.5

Maximum Collector Current |Ic|, A: 60

Package: TO220

IGP30N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGP30N60T Datasheet (PDF)

0.1. igp30n60t.pdf Size:379K _infineon

IGP30N60T
IGP30N60T

 IGP30N60T TrenchStop Series IGW30N60T Low Loss IGBT in Trench and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for : E - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

6.1. igp30n60h3.pdf Size:2044K _infineon

IGP30N60T
IGP30N60T

IGBT High speed IGBT in Trench and Fieldstop technology IGP30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGP30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low turn-off energy • low V CEsat • low EMI • maximum junctio

6.2. igp30n60h3 rev1 2g.pdf Size:1611K _infineon

IGP30N60T
IGP30N60T

IGBT High speed IGBT in Trench and Fieldstop technology IGP30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGP30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • maximum junction temperature 175°C G

Datasheet: IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGC70T120T8RL , GT60M301 , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T .

 

 
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