All IGBT. IXGH10N60 Datasheet

 

IXGH10N60 Datasheet and Replacement


   Type Designator: IXGH10N60
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO247AD
      - IGBT Cross-Reference

 

IXGH10N60 Datasheet (PDF)

 ..1. Size:42K  ixys
ixgh10n60.pdf pdf_icon

IXGH10N60

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

 0.1. Size:56K  ixys
ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf pdf_icon

IXGH10N60

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

 0.2. Size:42K  ixys
ixgh10n60a.pdf pdf_icon

IXGH10N60

Preliminary dataVCES IC25 VCE(sat)Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 VHigh speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 VTO-220AB(IXGP)Symbol Test Conditions Maximum RatingsGCEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VTO-263 AA (IXGA)VGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C20 A C (TAB)E

 7.1. Size:224K  ixys
ixgh10n300.pdf pdf_icon

IXGH10N60

Advance Technical InformationHigh Voltage IGBT VCES = 3000VIXGH10N300IC90 = 10A VCE(sat) 3.5V For Capacitor DischargeApplicationsTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VG (TAB)VGES Continuous 20 VCEVGEM Transient 30 VIC25 TC = 25C 18 AG = Gate C

Datasheet: IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , MBQ50T65FESC , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 , IXGM40N60A , IXGP10N60 , IXGP10N60A , IXXH80N65B4 .

History: 1MBI600U4B-120 | MMIX1X100N60B3H1 | RJP60V0DPM | MG300N1US1 | GT10G101 | 7MBP100VDA120-50 | XP15PJS120CL1B1

Keywords - IXGH10N60 transistor datasheet

 IXGH10N60 cross reference
 IXGH10N60 equivalent finder
 IXGH10N60 lookup
 IXGH10N60 substitution
 IXGH10N60 replacement

 

 
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