All IGBT. IXGH10N60 Equivalents Search

 

IXGH10N60 Spec and Replacement


   Type Designator: IXGH10N60
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO247AD

 IXGH10N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH10N60 specs

 ..1. Size:42K  ixys
ixgh10n60.pdf pdf_icon

IXGH10N60

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E ... See More ⇒

 0.1. Size:56K  ixys
ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf pdf_icon

IXGH10N60

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E ... See More ⇒

 0.2. Size:42K  ixys
ixgh10n60a.pdf pdf_icon

IXGH10N60

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C20 A C (TAB) E ... See More ⇒

 7.1. Size:224K  ixys
ixgh10n300.pdf pdf_icon

IXGH10N60

Advance Technical Information High Voltage IGBT VCES = 3000V IXGH10N300 IC90 = 10A VCE(sat) 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G (TAB) VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C 18 A G = Gate C ... See More ⇒

Specs: IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , SGT40N60FD2PT , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 , IXGM40N60A , IXGP10N60 , IXGP10N60A , IXXH80N65B4 .

Keywords - IXGH10N60 transistor spec

 IXGH10N60 cross reference
 IXGH10N60 equivalent finder
 IXGH10N60 lookup
 IXGH10N60 substitution
 IXGH10N60 replacement

 

 
Back to Top

 


 
.