IXYA20N120C3HV Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYA20N120C3HV Specs and Replacement

Type Designator: IXYA20N120C3HV

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 278 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO263HV

IXYA20N120C3HV Substitution

- IGBT ⓘ Cross-Reference Search

IXYA20N120C3HV datasheet

..1. Size:229K ixys
ixya20n120c3hv.pdf pdf_icon

1200V XPTTM VCES = 1200V IXYA20N120C3HV GenX3TM IGBTs IC110 = 20A IXYP20N120C3 VCE(sat) 3.4V IXYH20N120C3 tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 175 C 1200 V TO-220 (IXYP) VCGR TJ = 25 C to 175 C, RGE ... See More ⇒

..2. Size:221K ixys
ixya20n120c3hv ixyp20n120c3 ixyh20n120c3.pdf pdf_icon

7.1. Size:273K ixys
ixya20n65b3.pdf pdf_icon

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65B3 GenX3TM IC110 = 20A IXYP20N65B3 VCE(sat) 2.10V IXYH20N65B3 tfi(typ) = 87ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) VCES TJ = 25 C to 175 C 650... See More ⇒

7.2. Size:257K ixys
ixya20n65c3.pdf pdf_icon

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA20N65C3 GenX3TM IC110 = 20A IXYH20N65C3 VCE(sat) 2.50V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25 C to 175 C 650 V C (Tab) VCGR TJ = 25 C... See More ⇒