All IGBT. IXYA50N65C3 Datasheet

 

IXYA50N65C3 Datasheet and Replacement


   Type Designator: IXYA50N65C3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 132 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 135 pF
   Qg ⓘ - Total Gate Charge, typ: 86 nC
   Package: TO263
 

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IXYA50N65C3 Datasheet (PDF)

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IXYA50N65C3

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA50N65C3GenX3TM IC110 = 50AIXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175

Datasheet: IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 , IRGB20B60PD1 , IXYF30N450 , IXYF40N450 , IXA20PT1200LB , IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB .

Keywords - IXYA50N65C3 transistor datasheet

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