IXYF30N450 PDF and Equivalents Search

 

IXYF30N450 Specs and Replacement

Type Designator: IXYF30N450

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 23 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃

tr ⓘ - Rise Time, typ: 318 nS

Coesⓘ - Output Capacitance, typ: 83 pF

Package: I4PAK

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IXYF30N450 datasheet

 ..1. Size:188K  ixys
 ixyf30n450.pdf pdf_icon

IXYF30N450

Advance Technical Information High Voltage XPTTM IGBT VCES = 4500V IXYF30N450 IC110 = 17A VCE(sat) 3.9V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 4500 V VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V VGES Continuous 20 V 1 2 VGEM Transient 30 V Isolated Tab 5 IC25 TC = 25 C 23 A 1... See More ⇒

Specs: IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 , IXYA50N65C3 , RJH60F5DPQ-A0 , IXYF40N450 , IXA20PT1200LB , IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA .

History: RGTH60TS65 | RGTH80TS65

Keywords - IXYF30N450 transistor spec

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