All IGBT. IXYF30N450 Datasheet

 

IXYF30N450 Datasheet and Replacement


   Type Designator: IXYF30N450
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 318 nS
   Coesⓘ - Output Capacitance, typ: 83 pF
   Qg ⓘ - Total Gate Charge, typ: 88 nC
   Package: I4PAK
 

 IXYF30N450 substitution

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IXYF30N450 Datasheet (PDF)

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IXYF30N450

Advance Technical InformationHigh Voltage XPTTM IGBTVCES = 4500VIXYF30N450IC110 = 17AVCE(sat) 3.9V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 23 A1

Datasheet: IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 , IXYA50N65C3 , GT30J122 , IXYF40N450 , IXA20PT1200LB , IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA .

History: IXYF40N450

Keywords - IXYF30N450 transistor datasheet

 IXYF30N450 cross reference
 IXYF30N450 equivalent finder
 IXYF30N450 lookup
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 IXYF30N450 replacement

 

 
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