IXYF30N450 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYF30N450
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 23 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 318 nS
Coesⓘ - Output Capacitance, typ: 83 pF
Qgⓘ - Total Gate Charge, typ: 88 nC
Package: I4PAK
IXYF30N450 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYF30N450 Datasheet (PDF)
ixyf30n450.pdf
Advance Technical InformationHigh Voltage XPTTM IGBTVCES = 4500VIXYF30N450IC110 = 17AVCE(sat) 3.9V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 23 A1
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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