HCKW60N65CH2A IGBT. Datasheet pdf. Equivalent
Type Designator: HCKW60N65CH2A
Type: IGBT + Anti-Parallel Diode
Marking Code: K60H65C2A
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 120
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.85
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 136
Collector Capacity (Cc), typ, pF: 199
Total Gate Charge (Qg), typ, nC: 254
Package: TO247
HCKW60N65CH2A Transistor Equivalent Substitute - IGBT Cross-Reference Search
HCKW60N65CH2A Datasheet (PDF)
hckw60n65ch2a.pdf
HCKW60N65CH2A@CoolWatt IGBTHCKW60N65CH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technology L
hckw60n65bh2a.pdf
HCKW60N65BH2A@Trench-FS Cool-Watt IGBTHCKW60N65BH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS techno
Datasheet: 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , IKW50N60T , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ