All IGBT. HCKW60N65CH2A Datasheet

 

HCKW60N65CH2A Datasheet and Replacement


   Type Designator: HCKW60N65CH2A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 136 nS
   Coesⓘ - Output Capacitance, typ: 199 pF
   Package: TO247
      - IGBT Cross-Reference

 

HCKW60N65CH2A Datasheet (PDF)

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HCKW60N65CH2A

HCKW60N65CH2A@CoolWatt IGBTHCKW60N65CH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technology L

 5.1. Size:1383K  cn vgsemi
 hckw60n65bh2a.pdf pdf_icon

HCKW60N65CH2A

HCKW60N65BH2A@Trench-FS Cool-Watt IGBTHCKW60N65BH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS techno

Datasheet: 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , JT075N065WED , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - HCKW60N65CH2A transistor datasheet

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