All IGBT. 20N60C3R Datasheet

 

20N60C3R IGBT. Datasheet pdf. Equivalent

Type Designator: 20N60C3R

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 164W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 40A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 34

Package: TO220AB

20N60C3R Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

20N60C3R Datasheet (PDF)

1.1. hgtg20n60c3r.pdf Size:112K _igbt_a

20N60C3R
20N60C3R

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

1.2. hgtp20n60c3r.pdf Size:112K _igbt_a

20N60C3R
20N60C3R

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

 3.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

20N60C3R
20N60C3R

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108n

3.2. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon

20N60C3R
20N60C3R

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance PG-TO-22

 3.3. spw20n60c3 rev[1].2.5 pcn.pdf Size:765K _infineon

20N60C3R
20N60C3R

VDS Tjmax ? G G-TO247

3.4. spb20n60c3 rev.2.8.pdf Size:782K _infineon

20N60C3R
20N60C3R

VDS Tjmax ? G 3 G

 3.5. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

20N60C3R
20N60C3R

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 ? New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transconductance PG-TO-22

Datasheet: 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , 20N35GVL , 20N60C3DR , G7N60C , 27N60C3DR , 27N60C3R , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 .

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