All IGBT. 20N60C3R Datasheet

 

20N60C3R IGBT. Datasheet pdf. Equivalent

Type Designator: 20N60C3R

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 164

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 34

Package: TO220AB

20N60C3R Transistor Equivalent Substitute - IGBT Cross-Reference Search

20N60C3R IGBT. Datasheet pdf. Equivalent

Type Designator: 20N60C3R

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 164

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 34

Package: TO220AB

20N60C3R Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

20N60C3R Datasheet (PDF)

0.1. hgtg20n60c3r.pdf Size:112K _harris_semi

20N60C3R
20N60C3R

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

0.2. hgtp20n60c3r.pdf Size:112K _harris_semi

20N60C3R
20N60C3R

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

 7.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

20N60C3R
20N60C3R

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

7.2. spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

20N60C3R
20N60C3R

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

 7.3. spb20n60c3.pdf Size:782K _infineon

20N60C3R
20N60C3R

VDS Tjmax G 3 G

7.4. spw20n60c3.pdf Size:765K _infineon

20N60C3R
20N60C3R

VDS Tjmax G G-TO247

 7.5. spp20n60c3 spi20n60c3 spa20n60c3.pdf Size:1832K _infineon

20N60C3R
20N60C3R

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

7.6. spi20n60c3.pdf Size:215K _inchange_semiconductor

20N60C3R
20N60C3R

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPI20N60C3FEATURESWith TO-262(I2PAK) packageLow input capacitance and gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

7.7. spb20n60c3.pdf Size:258K _inchange_semiconductor

20N60C3R
20N60C3R

Isc N-Channel MOSFET Transistor SPB20N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

7.8. spw20n60c3.pdf Size:269K _inchange_semiconductor

20N60C3R
20N60C3R

isc N-Channel MOSFET Transistor SPW20N60C3 ISPW20N60C3FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

7.9. spa20n60c3.pdf Size:201K _inchange_semiconductor

20N60C3R
20N60C3R

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA20N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

7.10. spp20n60c3.pdf Size:247K _inchange_semiconductor

20N60C3R
20N60C3R

isc N-Channel MOSFET Transistor SPP20N60C3ISPP20N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE M

Datasheet: 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , 20N35GVL , 20N60C3DR , G7N60C , 27N60C3DR , 27N60C3R , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 .

 

 
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