HCKW60N65CH2A IGBT. Datasheet pdf. Equivalent
Type Designator: HCKW60N65CH2A
Type: IGBT + Anti-Parallel Diode
Marking Code: K60H65C2A
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.85 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 136 nS
Coesⓘ - Output Capacitance, typ: 199 pF
Qgⓘ - Total Gate Charge, typ: 254 nC
Package: TO247
HCKW60N65CH2A Transistor Equivalent Substitute - IGBT Cross-Reference Search
HCKW60N65CH2A Datasheet (PDF)
hckw60n65ch2a.pdf
HCKW60N65CH2A@CoolWatt IGBTHCKW60N65CH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technology L
hckw60n65bh2a.pdf
HCKW60N65BH2A@Trench-FS Cool-Watt IGBTHCKW60N65BH2A is a 650V60A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS techno
Datasheet: 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , SGH80N60UFD , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 .
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