BT25T120ANF Tutti i transistor e i loro equivalenti

 

BT25T120ANF IGBT. Curve Caratteristiche. Datasheet.

Tipo: BT25T120ANF

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 312

Tensione tra collettore ed emettitore (Vce): 1200

Tensione di saturazione drain source (Vcesat): 2.5

Massima tensione gate-source (Veg): 20

Massima corrente continuativa (Ic): 50

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente: 21

Capacità di uscita (Cc), pF: 82

Pack: TO3PN

Equivalente per i BT25T120ANF

BT25T120ANF 说明书

1.1. bt25t120anf.pdf Size:170K _igbt_a

BT25T120ANF
BT25T120ANF

Silicon FS Planar IGBT R ○ BT25T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features: Trench FS Technology, Positive temperature coef

1.2. bt25t120anf.pdf Size:172K _crhj

BT25T120ANF
BT25T120ANF

Silicon FS Planar IGBT R ○ BT25T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features: Trench FS Technology, Positive temperature coef

Altri tipi di IGBT... FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , IRG7IC28U , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM .

 


BT25T120ANF
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BT25T120ANF
  BT25T120ANF
  BT25T120ANF
  BT25T120ANF
 

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