10N40F1D Tutti i transistor e i loro equivalenti

 

10N40F1D IGBT. Curve Caratteristiche. Datasheet.

Tipo: 10N40F1D

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 75W

Tensione tra collettore ed emettitore (Vce): 400V

Tensione di saturazione drain source (Vcesat): 2.5V

Massima tensione gate-source (Veg): 20V

Massima corrente continuativa (Ic): 12A

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente: 45

Capacità di uscita (Cc), pF:

Pack: TO220

Equivalente per i 10N40F1D

10N40F1D Datasheet (PDF)

4.1. hgtp10n40f.pdf Size:43K _harris_semi

10N40F1D
10N40F1D

HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V Latch Free Operation EMITTER Typical Fall Time < 1.4s COLLECTOR GATE High Input Impedance Low Conduction Loss COLLECTOR (FLANGE) Anti-Parallel Diode tRR < 60ns Description The IGBT

5.1. mtb10n40e.pdf Size:234K _motorola

10N40F1D
10N40F1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's? Data Sheet MTB10N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 10 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.55 OHM than any existing surface mount packag

5.2. mtb10n40erev0x.pdf Size:273K _motorola

10N40F1D
10N40F1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB10N40E/D Designer's? Data Sheet MTB10N40E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 10 AMPERES 400 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.55 OHM than any existing surface mount packag

5.3. mtp10n40e.pdf Size:212K _motorola

10N40F1D
10N40F1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's? Data Sheet MTP10N40E TMOS E-FET.? High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced high voltage TMOS EFET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also offers a drain

5.4. mtp10n40erev0x.pdf Size:249K _motorola

10N40F1D
10N40F1D

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP10N40E/D Designer's? Data Sheet MTP10N40E TMOS E-FET.? High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced high voltage TMOS EFET is designed to 10 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new high energy device also offers a drain

5.5. php10n40_1.pdf Size:53K _philips2

10N40F1D
10N40F1D

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 10.7 A blocking voltage, fast switching and Ptot Total power dissi

5.6. 10n40.pdf Size:170K _utc

10N40F1D
10N40F1D

UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It

5.7. hgtp10n40c1d_hgtp10n40e1d_hgtp10n50c1d_hgtp10n50e1d.pdf Size:47K _harris_semi

10N40F1D
10N40F1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max. EMITTER COLLECTOR TFALL: 1s, 0.5s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impedance Anti-Paral

5.8. ftp10n40_fta10n40.pdf Size:425K _ark-micro

10N40F1D
10N40F1D

FTP10N40/FTA10N40 400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50Ω 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F

5.9. sif10n40c.pdf Size:375K _sisemi

10N40F1D
10N40F1D

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF10N40C N- MOS / N-CHANNEL POWER MOSFET SIF10N40C

5.10. mtn10n40e3.pdf Size:236K _cystek

10N40F1D
10N40F1D

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 400V RDS(ON) : 0.47Ω(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

5.11. cm10n40.pdf Size:119K _jdsemi

10N40F1D
10N40F1D

R C1N0 M04 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆400V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯 等功率开关电路 2 .主要特点 开关速度快 驱动简单,可并联使用 3 .封装外形 TO-2

Altri tipi di IGBT... 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 


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