IRG4PC50UD Tutti i transistor e i loro equivalenti

 

IRG4PC50UD IGBT. Curve Caratteristiche. Datasheet.

Tipo: IRG4PC50UD

Struttura interna di un IGBT: N-Channel

Potenza massima dissipabile (Pc): 200W

Tensione tra collettore ed emettitore (Vce): 600V

Tensione di saturazione drain source (Vcesat):

Massima tensione gate-source (Veg):

Massima corrente continuativa (Ic): 27A

Temperatura di giunzione (Tj), °C: 175

Tempo di salita del fronte di corrente:

Capacità di uscita (Cc), pF:

Pack: TO247AC

Equivalente per i IRG4PC50UD

IRG4PC50UD PDF doc:

1.1. irg4pc50ud.pdf Size:213K _international_rectifier

IRG4PC50UD
IRG4PC50UD

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution and highe

1.2. irg4pc50u.pdf Size:147K _international_rectifier

IRG4PC50UD
IRG4PC50UD

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE =

1.3. irg4pc50ud.pdf Size:219K _igbt_a

IRG4PC50UD
IRG4PC50UD

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V • Generation 4 IGBT design provides tighter G parameter distribution an

1.4. irg4pc50u.pdf Size:153K _igbt_a

IRG4PC50UD
IRG4PC50UD

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3

Altri tipi di IGBT... IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , 14N36GVL , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K .

 


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