2SK3936 Tutti i transistor e i loro equivalenti

 

2SK3936 MOSFET. Curve Caratteristiche. Datasheet.

Tipo: 2SK3936

Struttura del transistor: MOSFET

Canale di conduzione: N

Potenza massima dissipabile (Pd): 150

Tensione di blocco drain source (Vds): 500

Massima tensione gate-source (Vgs): 30

Massima corrente continuativa (Id): 23

Temperatura di giunzione (Tj), °C: 150

Tempo di salita del fronte di corrente (tr): 12

Capacità di uscita (Cd), pf: 420

Resistenza di uscita (Rds), Ohm: 0.2

Pack: SC65

Equivalente per i 2SK3936

 

2SK3936 Datasheet (PDF)

1.1. 2sk3936.pdf Size:180K _toshiba

2SK3936
2SK3936

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 ? (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDSS = 500 ?A (VDS

4.1. 2sk3935.pdf Size:313K _toshiba

2SK3936
2SK3936

2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18? (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim

4.2. 2sk3934.pdf Size:288K _toshiba

2SK3936
2SK3936

2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23? (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta

4.3. 2sk3933-01l-s-sj.pdf Size:162K _fuji

2SK3936
2SK3936

2SK3933-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings E

4.4. 2sk3930-01l-s-sj.pdf Size:173K _fuji

2SK3936
2SK3936

2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T

4.5. 2sk3931.pdf Size:101K _fuji

2SK3936
2SK3936

2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent ci

4.6. 2sk3932.pdf Size:105K _fuji

2SK3936
2SK3936

2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unl

Altri tipi di transistor... 2SK3864 , 2SK3868 , 2SK3879 , 2SK389 , 2SK3906 , 2SK3929-01MR , 2SK3931-01 , 2SK3932-01MR , 40673 , AP2308GEN-HF , AP2309AGN-HF , AP2309GEN-HF , AP2309GN-HF , AP2310AGN-HF , AP2310CGN-HF , AP2310GG-HF , AP2310GK-HF .

 


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