2SA562-O Tutti i transistor e i loro equivalenti

 

2SA562-O . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: 2SA562-O

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.5

Tensione tra collettore e base (Vcb): 35

Tensione tra collettore ed emettitore (Vce): 30

Tensione tra base ed emettitore (Veb): 5

Massima corrente continuativa (Ic): 0.5

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 200

Capacità di uscita (Cc), Pf: 13

Il guadagno di tensione in continua (hfe): 70

Pack: TO92

Equivalente per i 2SA562-O

2SA562-O Datasheet (PDF)

1.1. 2sa562-o.pdf Size:239K _update

2SA562-O
2SA562-O

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

3.1. 2sa562-y.pdf Size:239K _update

2SA562-O
2SA562-O

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

4.1. 2sa562tm.pdf Size:201K _toshiba

2SA562-O
2SA562-O

2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta = = 25C) = = Charac

4.2. 2sa562.pdf Size:1015K _no

2SA562-O
2SA562-O

4.3. 2sa562.pdf Size:206K _secos

2SA562-O
2SA562-O

2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Excellent hFE Linearity Millimeter REF. Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B 4.30 4.70 C 12.70 - Product-Rank 2SA562-O 2SA562-Y D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 Range 70~140 120~240 G 1

4.4. 2sa562.pdf Size:308K _lge

2SA562-O
2SA562-O

2SA562(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA P

4.5. 2sa562m.pdf Size:464K _blue-rocket-elect

2SA562-O
2SA562-O

2SA562M(BR3CG562M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 极好的 h 特性,与 2SC1959M(3DG1959M)互补。 FE Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M). 用途 / Applications 用于音频小功率放大,激励级放大及开

Altri tipi di transistor... 2SA2169-TL-E , 2SA2186-AN , 2SA2188 , 2SA2205-E , 2SA2205-TL-E , 2SA2210-1E , 2SA2223 , 2SA2223A , AC128 , 2SA562-Y , 2SB1201S-E , 2SB1201S-TL-E , 2SB1201T-E , 2SB1201T-TL-E , 2SB1203S-E , 2SB1644J , 2SB1203S-TL-E .

 


2SA562-O
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