BCP69T1G Tutti i transistor e i loro equivalenti

 

BCP69T1G . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: BCP69T1G

Codice: CE

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 1.5

Tensione tra collettore e base (Vcb): 25

Tensione tra collettore ed emettitore (Vce): 20

Tensione tra base ed emettitore (Veb): 5

Massima corrente continuativa (Ic): 1

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 60

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 85

Pack: SOT223

Equivalente per i BCP69T1G

 

BCP69T1G Datasheet (PDF)

1.1. bcp69t1g.pdf Size:89K _upd

BCP69T1G
BCP69T1G

BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223-4 package, which is designed for medium power surface http://onsemi.com mount applications. • High Current: IC = -1.0 A MEDIUM POWER • The SOT-223-4 Package can be soldered using wave or

1.2. nsvbcp69t1g.pdf Size:122K _onsemi

BCP69T1G
BCP69T1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER • High Current: IC = -1.0 A PNP SILICON • The SOT-223 Package Can Be Soldered

3.1. bcp69t1rev2.pdf Size:71K _motorola

BCP69T1G
BCP69T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP69T1/D BCP69T1 PNP Silicon Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT

3.2. bcp69t1-d.pdf Size:96K _onsemi

BCP69T1G
BCP69T1G

BCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER High Current: IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered Using Wave or Reflo

Altri tipi di transistor... BCM857BS , BCM857BV , BCM857DS , BCP3904 , BCP53-10T1G , BCP5316Q , BCP53-16T1G , BCP53-16T3G , BC237 , BCP56-10T1G , BCP56-10T3G , BCP5616Q , BCP56-16T1G , BCP56-16T3G , BCP56T1G , BCP56T3G , BCP68T1G .

 


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BJT BCP69T1G | BCP68T1G | BCP56T3G | BCP56T1G | BCP56-16T3G | BCP56-16T1G | BCP5616Q | BCP56-10T3G | BCP56-10T1G | BCP53T1G | BCP53-16T3G | BCP53-16T1G | BCP5316Q | BCP53-10T1G | BCP3904 | BCM857DS | BCM857BV | BCM857BS | BCM856DS | BCM856BS |