IRG4PSH71UD トランジスタ データシート

 

IRG4PSH71UD トランジスタ データシート

品 名: IRG4PSH71UD

IGBT 種 類: N-Channel

全許容損失 (Pc): 350W

コレクタ・エミッタ間電圧 (Vce): 1200V

コレクタ・エミッタ間飽和電圧 (Vcesat): 2.70V

ゲ ー ト ・ エ ミ ッ タ 電 圧 (Veg):

コレクタ電流(直流) (Ic): 99A

最大ジャンクション温度 (Tj), °C:

ターンオン上昇時間:

出力容量 (Cc), pF:

パッケージ: TO274AA

IRG4PSH71UD トランジスタ パラメトリック検索

 

IRG4PSH71UD Datasheet (PDF)

1.1. irg4psh71k.pdf Size:146K _international_rectifier

IRG4PSH71UD
IRG4PSH71UD

PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 1200V Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 2.97V High short circuit rating IGBTs, optimized for G motorcontrol Minimum switching losses combined with low @VGE = 15V, IC = 42A E condu

1.2. irg4psh71kd.pdf Size:200K _international_rectifier

IRG4PSH71UD
IRG4PSH71UD

PD - 91688A IRG4PSH71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible VCES = 1200V with TO-247 and TO-264, with reinforced pins High short circuit rating IGBTs, optimized for VCE(on) typ. = 2.97V motorcontrol G Minimum switching losses combined wit

1.3. irg4psh71u.pdf Size:271K _igbt_a

IRG4PSH71UD
IRG4PSH71UD

PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating VCES = 1200V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.50V G parameter distribution and higher efficiency (minimum switching and conduct

1.4. irg4psh71ud.pdf Size:326K _igbt_a

IRG4PSH71UD
IRG4PSH71UD

PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Copack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz VCES = 1200V in resonant mode soft switching • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.52V G parameter distribution and higher effi

1.5. irg4psh71k.pdf Size:136K _igbt_a

IRG4PSH71UD
IRG4PSH71UD

PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features VCES = 1200V • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins VCE(on) typ. = 2.97V • High short circuit rating IGBTs, optimized for G motorcontrol • Minimum switching losses combined with low @VGE = 15V, IC = 42A

1.6. irg4psh71kd.pdf Size:198K _igbt_a

IRG4PSH71UD
IRG4PSH71UD

PD - 91688A IRG4PSH71KD PRELIMINARY Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible VCES = 1200V with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for VCE(on) typ. = 2.97V motorcontrol G • Minimum switching losses com

データーシート ... IRG4PC20U , IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , FGH40N60SFD , IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U .

 


IRG4PSH71UD
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