STB50NF25 トランジスタ データシート

 

STB50NF25 トランジスタ データシート

品 名: STB50NF25

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 160 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 250 V

ド レ イ ン 電 流 (直 流) (Id): 45 A

直 流 オ ン 抵 抗 (Rds): 0.069 Ohm

パ ッ ケ ー ジ : D2PAK

STB50NF25 トランジスタ パラメトリック検索

 

STB50NF25 Datasheet (PDF)

1.1. stb50nf25 stp50nf25.pdf Size:345K _st

STB50NF25
STB50NF25

STB50NF25 STP50NF25 N-channel 250V - 0.055? - 45A - D2PAK - TO-220 low gate charge STripFET Power MOSFET Features RDS(on) Type VDSS ID PW Max STP50NF25 250 V <0.069 ? 45 A 160 W STB50NF25 250 V <0.069 ? 45 A 160 W 3 3 100% avalanche tested 1 2 1 Gate charge minimized TO-220 D?PAK Low intrinsic capacitances Application Switching applications Figure 1. Internal schemati

4.1. stb50ne10.pdf Size:443K _st

STB50NF25
STB50NF25

STB50NE10 N-channel 100V - 0.021? - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V <0.027? 50A Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge at 100 C 1 Application oriented characterization D2PAK Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-

4.2. stb50n25m5.pdf Size:835K _st

STB50NF25
STB50NF25

STB50N25M5 N-channel 250 V, 0.055 ?, 28 A, D2PAK MDmesh V Power MOSFET Features RDS(on) Type VDSS ID max STB50N25M5 250 V < 0.065 ? 28 A Amongst the best RDS(on)* area 3 1 High dv/dt capability Excellent switching performance D?PAK Easy to drive 100% avalanche tested Application Switching applications Figure 1. Internal schematic diagram Description D(2) MDmesh

4.3. stb50nh02l.pdf Size:435K _st

STB50NF25
STB50NF25

STB50NH02L N-CHANNEL 24V - 0.011 ? - 50A D?PAK STripFET III POWER MOSFET TYPE VDSS RDS(on) ID STB50NH02L 24 V < 0.0135 ? 50 A TYPICAL RDS(on) = 0.011 ? @ 10 V TYPICAL RDS(on) = 0.015 ? @ 5 V RDS(ON) * Qg INDUSTRYs BENCHMARK CONDUCTION LOSSES REDUCED 3 SWITCHING LOSSES REDUCED 1 LOW THRESHOLD DEVICE D?PAK SURFACE-MOUNTING D2PAK (TO-263) TO-263 (Suffix T4) POWER PACKAGE IN

4.4. stb50ne08.pdf Size:95K _st

STB50NF25
STB50NF25

STB50NE08 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE? POWER MOSFET TYPE VDSS RDS(on) ID STB50NE08 80 V <0.024 ? 50 A TYPICAL R = 0.020 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE AT 100 C APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix T4) This Power MOS

データーシート... STB40NF20 , STB40NS15 , STB42N65M5 , STB45NF06 , STB4N62K3 , STB4NK60Z , STB4NK60Z-1 , STB50N25M5 , IRF1404 , STB55NF03L , STB55NF06 , STB55NF06L , STB5N52K3 , STB5N62K3 , STB5NK50Z , STB60N55F3 , STB60NF06 .

 


STB50NF25
  STB50NF25
  STB50NF25
  STB50NF25
 
STB50NF25
  STB50NF25
  STB50NF25
 

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