STW160N75F3 トランジスタ データシート

 

STW160N75F3 トランジスタ データシート

品 名: STW160N75F3

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 315 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 75 V

ド レ イ ン 電 流 (直 流) (Id): 120 A

直 流 オ ン 抵 抗 (Rds): 0.004 Ohm

パ ッ ケ ー ジ : TO247

STW160N75F3 トランジスタ パラメトリック検索

 

STW160N75F3 Datasheet (PDF)

1.1. stb160n75f3 stp160n75f3 stw160n75f3.pdf Size:394K _st

STW160N75F3
STW160N75F3

STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5m? - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features RDS(on) Type VDSS ID (max.) 3 STB160N75F3 75V 3.7 m? 120 A(1) 3 2 2 1 1 STP160N75F3 75V 4 m? TO-220 120 A(1) TO-247 STW160N75F3 75V 4 m? 120 A(1) 1. Current limited by package 3 1 Ultra low on-resistance D?PAK 100% Avalanche tested Application

5.1. 2stw1693.pdf Size:150K _st

STW160N75F3
STW160N75F3

2STW1693 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured in Figure 1. Internal schematic diagram low voltage planar technology using base island

5.2. 2stw1695.pdf Size:169K _st

STW160N75F3
STW160N75F3

2STW1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schematic diagram

5.3. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf Size:994K _st

STW160N75F3
STW160N75F3

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 ?, 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.299 ? 12 A STU16N65M5 STW16N65M5 3 DPAK worldwide best RDS(on) 2 3 1 2 1 Higher VDSS ratin

5.4. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf Size:1053K _st

STW160N75F3
STW160N75F3

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 ?, 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.279 ? 12 A STU16N65M5 STW16N65M5 3 DPAK worldwide best RDS(on) 2 3 1 2 1 Higher VDSS ratin

5.5. stf16nk60z stp16nk60z stw16nk60z.pdf Size:745K _st

STW160N75F3
STW160N75F3

STF16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 ?, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max STF16NK60Z 600 V < 0.42 ? 14 A(1) 40 W 3 3 2 2 1 STP16NK60Z 600 V < 0.42 ? 14 A 190 W 1 TO-220 STW16NK60Z 600 V < 0.42 ? 14 A 190 W TO-220FP 1. Limited by package. 100% avalanche tested 3 Extremely high dv/dt

5.6. stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf Size:577K _st

STW160N75F3
STW160N75F3

STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 ? - 15 A MDmesh II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB16NM50N 550 V 0.26 ? 15 A D?PAK I?PAK STI16NM50N 550 V 0.26 ? 15 A 3 STF16NM50N 550 V 0.26 ? 15 A (1) 2 1 STP16NM50N 550 V 0.26 ? 15 A TO-247 STW16NM50N 550 V 0.26 ? 15 A 3

5.7. stw16nb40.pdf Size:73K _st2

STW160N75F3
STW160N75F3

STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19? - 18.4A TO-247/ISOWATT218 PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW18NB40 400 V < 0.26 ? 18.4 A STH18NB40FI 400 V < 0.26 ? 12.4A TYPICAL R = 0.19 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest hig

5.8. stw16nb60.pdf Size:252K _st2

STW160N75F3
STW160N75F3

STW16NB60 N-CHANNEL 600V - 0.3? - 16ATO-247 PowerMesh MOSFET TYPE VDSS RDS(on) ID STW16NB60 600V < 0.35 ? 16 A TYPICAL RDS(on) = 0.3? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an ad- vanced family of po

5.9. stw16na40.pdf Size:73K _st2

STW160N75F3
STW160N75F3

STW16NA40 STH16NA40FI N - CHANNEL 400V - 0.21? - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE VDSS RDS(on) ID STW16NA40 400 V < 0.3 ? 16 A 400V < 0.3 ? 10 A STH16NA40FI TYPICAL R = 0.21 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 APPLICATION ORIENTED 2 2 1 CHARACTERIZATION 1 APPLICATIONS TO

5.10. stw16na60.pdf Size:75K _st2

STW160N75F3
STW160N75F3

STW16NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STW16NA60 600 V < 0.4 ? 16 A TYPICAL R = 0.33 ? DS(on) 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE 3 2 GATE CHARGE MINIMIZED 1 REDUCED VOLTAGE SPREAD TO-247 APPLICATIONS HIGH CURRENT, HIGH

データーシート... STW13NK100Z , STW13NK50Z , STW13NK60Z , STW13NM60N , STW14NK50Z , STW15NK50Z , STW15NK90Z , STW15NM60ND , BSS138 , STW16N65M5 , STW16NK60Z , STW17N62K3 , STW18NM60N , STW18NM80 , STW19NM50N , STW20N95K5 , STW20NK50Z .

 


STW160N75F3
  STW160N75F3
  STW160N75F3
  STW160N75F3
 
STW160N75F3
  STW160N75F3
  STW160N75F3
 

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