2SK3495 トランジスタ データシート

 

2SK3495 トランジスタ データシート

品 名: 2SK3495

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 1 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 60 V

ゲ ー ト ・ ソ ー ス 電 圧 (Vgs): 20 V

ド レ イ ン 電 流 (直 流) (Id): 1.2 A

最大ジャンクション温度 (Tj): 150 °C

立 上 り 時 間 (tr): 3 nS

出 力 容 量 (Cd): 20 pF

直 流 オ ン 抵 抗 (Rds): 0.38 Ohm

パ ッ ケ ー ジ : NMP

2SK3495 トランジスタ パラメトリック検索

 

2SK3495 Datasheet (PDF)

1.1. 2sk3495.pdf Size:27K _sanyo

2SK3495
2SK3495

Ordering number : ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2087A 4V drive. [2SK3495] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate Specifications 2.54 2.54 Absolute Maximum Ratings at Ta=25C

4.1. 2sk349 2sk350.pdf Size:49K _update

2SK3495



4.2. 2sk3499.pdf Size:229K _toshiba

2SK3495
2SK3495

2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 ? (typ.) High forward transfer admittance: |Y | = 8.0 S (typ.) fs Low leakage current: I = 100 A (max) (V = 400 V) DSS DS Enhancement-model: Vth = 2.0 to

4.3. 2sk3498.pdf Size:161K _toshiba

2SK3495
2SK3495

2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSV) 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON-resistance: RDS (ON) = 4.0 ? (typ.) High forward transfer admittance: |Yfs| = 0.6 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.4. 2sk3497.pdf Size:114K _toshiba

2SK3495
2SK3495

2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V 1. GATE Gate-source voltage VGSS 12 V 2. DRAIN (HEAT SINK) DC (Note 1) ID 10 A

4.5. 2sk3491.pdf Size:29K _sanyo

2SK3495
2SK3495

Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Low Qg. 2083B [2SK3491] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2092B [2SK3491] 6.5 2.3 5.0 0.5 4 0.5 0.85

4.6. 2sk3494.pdf Size:73K _panasonic

2SK3495
2SK3495

Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET Features Unit: mm 4.60.2 10.50.3 Low on-resistance, low Qg 1.40.1 High avalanche resistance Applications For PDP 1.40.1 2.50.2 For high-speed switching 0.80.1 2.540.3 0 to 0.3 Absolute Maximum Ratings TC = 25C (10.2) (8.9) Parameter Symbol Rating Unit 1 2 3 Drain-source surrender voltage VDSS 250 V

4.7. 2sk3496-01mr.pdf Size:117K _fuji

2SK3495
2SK3495

2SK3496-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherw

データーシート... 2SK3484-Z , 2SK3485 , 2SK3486 , 2SK3487 , 2SK3488 , 2SK3489 , 2SK3491 , 2SK3494 , IRF9640 , 2SK3528 , 2SK3532 , 2SK3560 , AP15T20AGH-HF , AP15T20GH-HF , AP15T20GI-HF , AP15T20GS-HF , AP16N50I-HF .

 


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