APT60M60JFLL トランジスタ データシート

 

APT60M60JFLL トランジスタ データシート

品 名: APT60M60JFLL

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 690 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 600 V

ゲ ー ト ・ ソ ー ス 電 圧 (Vgs): 30 V

ド レ イ ン 電 流 (直 流) (Id): 70 A

最大ジャンクション温度 (Tj): 150 °C

立 上 り 時 間 (tr): 16 nS

出 力 容 量 (Cd): 2200 pF

直 流 オ ン 抵 抗 (Rds): 0.06 Ohm

パ ッ ケ ー ジ : SOT227

APT60M60JFLL トランジスタ パラメトリック検索

 

APT60M60JFLL Datasheet (PDF)

1.1. apt60m60jll.pdf Size:69K _apt

APT60M60JFLL
APT60M60JFLL

APT60M60JLL 600V 70A 0.060W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

1.2. apt60m60jfll.pdf Size:70K _apt

APT60M60JFLL
APT60M60JFLL

APT60M60JFLL 600V 70A 0.060W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.1. apt60m90jn.pdf Size:60K _apt

APT60M60JFLL
APT60M60JFLL

D G APT60M90JN 600V 57A 0.090Ω S "UL Recognized" File No. E145592 (S) ISOTOP® SINGLE DIE ISOTOP® PACKAGE POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 60M90JN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 57 Amps IDM, lLM Pulse

4.2. apt60m75jvr.pdf Size:73K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

4.3. apt60m80l2vr.pdf Size:77K _apt

APT60M60JFLL
APT60M60JFLL

APT60M80L2VR 600V 65A 0.080W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

4.4. apt60m75jll.pdf Size:69K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75JLL 600V 58A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's "

4.5. apt60m75l2ll.pdf Size:64K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75L2LL 600V 73A 0.075W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

4.6. apt60m75pvr.pdf Size:36K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V® P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

4.7. apt60m75.pdf Size:73K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75JVR 600V 62A 0.075Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® D • Faster Switching • 100% Avalanc

4.8. apt60m75l2fll.pdf Size:65K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75L2FLL 600V 73A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds

4.9. apt60m75jfll.pdf Size:71K _apt

APT60M60JFLL
APT60M60JFLL

APT60M75JFLL 600V 58A 0.075W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wit

4.10. apt60m80jvr.pdf Size:69K _apt

APT60M60JFLL
APT60M60JFLL

APT60M80JVR Ω 600V 55A 0.080Ω Ω Ω Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Popular SOT-227

データーシート... APT6030SVFR , APT6030SVR , APT6035BVFR , APT6038BFLL , APT6038BLL , APT6040BVFR , APT6040BVR , APT6060BNR , IRFP4332 , APT60M60JLL , APT60M75JFLL , APT60M75JLL , APT60M75L2FLL , APT60M75L2LL , APT60M80JVR , APT60M80L2VR , APT77N60JC3 .

 


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