IRF7507(P) トランジスタ データシート

 

IRF7507(P) トランジスタ データシート

品 名: IRF7507(P)

MOSFET

MOSFET 種 類: P

許 容 損 失 (Pd): 1.25 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 20 V

ゲ ー ト ・ ソ ー ス 電 圧 (Vgs): 2.7 V

ド レ イ ン 電 流 (直 流) (Id): 1.7 A

最大ジャンクション温度 (Tj): 150 °C

直 流 オ ン 抵 抗 (Rds): 0.27 Ohm

パ ッ ケ ー ジ : SO8

IRF7507(P) トランジスタ パラメトリック検索

 

IRF7507(P) Datasheet (PDF)

3.1. irf7507.pdf Size:216K _international_rectifier

IRF7507(P)
IRF7507(P)

PD - 91269I IRF7507 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 20V -20V S2 D2 Low Profile (<1.1mm) 4 5 Available in Tape & Reel G2 D2 P-CHANNEL MOSFET Fast Switching RDS(on) 0.135? 0.27? Top View Description Fifth Generation HEXFETs fr

4.1. irf7503.pdf Size:114K _international_rectifier

IRF7507(P)
IRF7507(P)

PD - 9.1266G IRF7503 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 Dual N-Channel MOSFET VDSS = 30V 2 7 G1 D1 Very Small SOIC Package 3 6 S2 Low Profile (<1.1mm) D2 Available in Tape & Reel 4 5 G2 D2 RDS(on) = 0.135? Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

4.2. irf7504.pdf Size:115K _international_rectifier

IRF7507(P)
IRF7507(P)

PD - 9.1267G IRF7504 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 Dual P-Channel MOSFET VDSS = -20V 2 7 G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G2 D2 RDS(on) = 0.27? Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

4.3. irf7501.pdf Size:143K _international_rectifier

IRF7507(P)
IRF7507(P)

PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ulrtra Low On-Resistance VDSS =20V 2 7 Dual N-Channel MOSFET G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (<1.1mm) 4 5 G2 D2 RDS(on) = 0.135? Available in Tape & Reel Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced

4.4. irf7506.pdf Size:103K _international_rectifier

IRF7507(P)
IRF7507(P)

PD - 9.1268F IRF7506 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 S2 D2 Low Profile (<1.1mm) 4 5 G2 D2 Available in Tape & Reel RDS(on) = 0.27? Fast Switching To p V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

4.5. irf7509.pdf Size:217K _international_rectifier

IRF7507(P)
IRF7507(P)

PD - 91270J IRF7509 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 VDSS 30V -30V S2 D2 Low Profile (<1.1mm) 4 5 Available in Tape & Reel G2 D2 P-CHANNEL MOSFET Fast Switching RDS(on) 0.11? 0.20? Top View Description Fifth Generation HEXFETs fro

4.6. irf750a.pdf Size:942K _samsung

IRF7507(P)
IRF7507(P)

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

データーシート... IRF7413A , IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , IRF744 , IRF7507(N) , 2SK3569 , IRF7509(N) , IRF7509(P) , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 , IRF7526D1 , IRF7555 .

 


IRF7507(P)
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