2SK3575-Z トランジスタ データシート

 

2SK3575-Z トランジスタ データシート

品 名: 2SK3575-Z

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 105 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 30 V

ゲ ー ト ・ ソ ー ス 電 圧 (Vgs): 20 V

ド レ イ ン 電 流 (直 流) (Id): 83 A

最大ジャンクション温度 (Tj): 150 °C

立 上 り 時 間 (tr): 27 nS

出 力 容 量 (Cd): 1430 pF

直 流 オ ン 抵 抗 (Rds): 0.0045 Ohm

パ ッ ケ ー ジ : TO263

2SK3575-Z トランジスタ パラメトリック検索

 

2SK3575-Z Datasheet (PDF)

2.1. 2sk3575-s-z-zk.pdf Size:213K _update

2SK3575-Z
2SK3575-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. 2sk3573.pdf Size:43K _update

2SK3575-Z

SMD Type MOSFET MOS Field Effect Transistor 2SK3573 TO-263 Unit: mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount d

4.2. 2sk3577.pdf Size:197K _update

2SK3575-Z
2SK3575-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.3. 2sk3570.pdf Size:45K _update

2SK3575-Z

SMD Type MOSFET MOS Field Effect Transistor 2SK3570 TO-263 Unit: mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =12 m MAX. (VGS =10V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount dev

4.4. 2sk3576.pdf Size:193K _update

2SK3575-Z
2SK3575-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.5. 2sk3571.pdf Size:44K _update

2SK3575-Z

SMD Type MOSFET MOS Field Effect Transistor 2SK3571 TO-263 Unit: mm +0.2 4.57-0.2 +0.1 1.27-0.1 Features 4.5V drive available. Low on-state resistance, RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A) 2.54 1Gate +0.2 Built-in gate protection diode 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2

4.6. 2sk3572.pdf Size:45K _update

2SK3575-Z

SMD Type MOSFET MOS Field Effect Transistor 2SK3572 TO-263 Unit: mm +0.2 4.57-0.2 +0.1 Features 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A) 2.54 1Gate Built-in gate protection diode +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2

4.7. 2sk3573-s-z-zk.pdf Size:74K _update

2SK3575-Z
2SK3575-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB designed for low voltage high current applications such as 2SK3573-S TO-262 DC/DC converter with synchronous

4.8. 2sk3574.pdf Size:43K _update

2SK3575-Z

SMD Type MOSFET MOS Field Effect Transistor 2SK3574 TO-263 Unit: mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount

4.9. 2sk357.pdf Size:352K _toshiba

2SK3575-Z
2SK3575-Z

データーシート... 2SK3572 , 2SK3573 , 2SK3573-S , 2SK3573-Z , 2SK3573-ZK , 2SK3574 , 2SK3575 , 2SK3575-S , IRFZ24N , 2SK3575-ZK , 2SK3576 , 2SK3577 , 2SK358 , 2SK4178-ZK , 2SK4181-TL-E , 2SK4184-ZK , 2SK4201-S19-AY .

 


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