FDD5N50 トランジスタ データシート

 

FDD5N50 トランジスタ データシート

品 名: FDD5N50

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 40 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 500 V

ゲ ー ト ・ ソ ー ス 電 圧 (Vgs): 30 V

ド レ イ ン 電 流 (直 流) (Id): 4 A

最大ジャンクション温度 (Tj): 150 °C

直 流 オ ン 抵 抗 (Rds): 1.4 Ohm

パ ッ ケ ー ジ : TO252_DPAK

FDD5N50 トランジスタ パラメトリック検索

 

FDD5N50 Datasheet (PDF)

1.1. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50
FDD5N50

December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55? Features Description RDS(on) = 1.25? ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially

1.2. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50
FDD5N50

November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5? Features Description RDS(on) = 1.38? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailored to

1.3. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50
FDD5N50

December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0? Features Description RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology has been especia

1.4. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50
FDD5N50

December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4? Features Description RDS(on) = 1.15? ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to

1.5. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50
FDD5N50

November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75? Features Description RDS(on) = 1.47? ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially tailore

データーシート... FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , 2SK3562 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , STT03N20 .

 


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