2SK3115B トランジスタ データシート

 

2SK3115B トランジスタ データシート

品 名: 2SK3115B

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 35 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 600 V

ゲ ー ト ・ ソ ー ス 電 圧 (Vgs): 30 V

ド レ イ ン 電 流 (直 流) (Id): 6 A

最大ジャンクション温度 (Tj): 150 °C

立 上 り 時 間 (tr): 11 nS

出 力 容 量 (Cd): 380 pF

直 流 オ ン 抵 抗 (Rds): 1.2 Ohm

パ ッ ケ ー ジ : TO220F

2SK3115B トランジスタ パラメトリック検索

 

2SK3115B Datasheet (PDF)

1.1. 2sk3115b.pdf Size:264K _update

2SK3115B
2SK3115B

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

3.1. 2sk3115.pdf Size:69K _nec

2SK3115B
2SK3115B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION FEATURES Low gate charge PART NUMBER PACKAGE QG = 26 nC

4.1. 2sk3112.pdf Size:46K _update

2SK3115B

SMD Type MOSFET MOS Field Effect Transistor 2SK3112 TO-263 Unit: mm Features +0.2 4.57-0.2 Gate voltage rating 30 V +0.1 1.27-0.1 Low on-state resistance RDS(on) = 110m MAX. (VGS =10 V, ID = 13A) Low input capacitance +0.1 0.1max 1.27-0.1 Ciss = 1600 pF TYP. (VDS =10V, VGS =0V) +0.1 Avalanche capability rated 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0

4.2. 2sk310 2sk311.pdf Size:53K _update

2SK3115B



4.3. 2sk3116b.pdf Size:265K _update

2SK3115B
2SK3115B

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3114b.pdf Size:246K _update

2SK3115B
2SK3115B

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.5. 2sk3119.pdf Size:149K _sanyo

2SK3115B
2SK3115B

Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SK3119] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Param

4.6. 2sk3116.pdf Size:70K _nec

2SK3115B
2SK3115B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3116 TO-220AB designed for high voltage applications such as switching power 2SK3116-S TO-262 supply, AC adapter. 2SK3116-ZJ TO-263

4.7. 2sk3114.pdf Size:94K _nec

2SK3115B
2SK3115B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3114 Isolated TO-220 designed for high voltage applications such as switching power supply, AC adapter. FEATURES (

4.8. 2sk3111.pdf Size:75K _nec

2SK3115B
2SK3115B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3111 TO-220AB switching characteristics, and designed for high voltage 2SK3111-S TO-262 applications such as DC/DC converter, actuator drive

4.9. 2sk3110.pdf Size:67K _nec

2SK3115B
2SK3115B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE and designed for high voltage applications such as DC/DC 2SK3110 Isolated TO-220 converter, actuator driver. FEATURE

4.10. 2sk3113.pdf Size:45K _kexin

2SK3115B

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3113 Features TO-252 Unit: mm Low on-state resistance +0.15 +0.1 6.50-0.15 2.30-0.1 RDS(on) =4.4 MAX. (VGS =10 V, ID =1.0 A) 5.30+0.2 0.50+0.8 -0.2 -0.7 Low gate charge QG = 9 nC TYP. (VDD =450 V, VGS =10 V, ID =2.0 A) 0.127 Gate voltage rating 30 V 0.80+0.1 max -0.1 Avalanche capability ratings +0.1 2.3 0.60-0.1 1G

データーシート... ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , ZXMHN6A07T8 , IRF9640 , STU437S , STU435S , 2SJ652 , 2SJ656 , 2SK2394 , 2SK3557 , 2SK3666 , 2SK3703 .

 


2SK3115B
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2SK3115B
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