IXFH23N80Q トランジスタ データシート

 

IXFH23N80Q トランジスタ データシート

品 名: IXFH23N80Q

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 500 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 800 V

ド レ イ ン 電 流 (直 流) (Id): 23 A

立 上 り 時 間 (tr): 250 nS

直 流 オ ン 抵 抗 (Rds): 0.42 Ohm

パ ッ ケ ー ジ : TO247

IXFH23N80Q トランジスタ パラメトリック検索

 

IXFH23N80Q Datasheet (PDF)

4.1. ixfh230n10t.pdf Size:165K _ixys

IXFH23N80Q
IXFH23N80Q

Preliminary Technical Information VDSS = 100V Trench HiperFETTM IXFH230N10T ID25 = 230A Power MOSFET ? ? RDS(on) ? ? ? 4.7m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V G VDGR TJ = 25C to 175C, RGS = 1M? 100 V (TAB) D S VGSS Continuous 20 V VGSM Transient 30 V

5.1. ixfh22n60p ixfv22n60p.pdf Size:295K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS ? ? RDS(on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G D (TAB) VGS Continuous 30 V

5.2. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

IXFH23N80Q
IXFH23N80Q

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS =

5.3. ixfh20n60q ixft20n60q.pdf Size:144K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs Ω RDS(on) = 0.35 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS C

5.4. ixfh22n50p ixfv22n50p.pdf Size:312K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) ? 270 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V D (TAB) VGS Continuous 30 V VGSM

5.5. ixfv26n50p ixfh26n50p.pdf Size:323K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET ? ? IXFV 26N50PS RDS(on) ? 230 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-247 (IXFH) VGSS Continuos 30 V VGSM Transient

5.6. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

IXFH23N80Q
IXFH23N80Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

5.7. ixfq28n60p3 ixfh28n60p3.pdf Size:130K _ixys

IXFH23N80Q
IXFH23N80Q

Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 260mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-247 ( IX

5.8. ixfh24n80p ixfk24n80p ixft24n80p.pdf Size:158K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET ? ? IXFT 24N80P RDS(on) ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGSS Continuous 30 V G VGSM Transient

5.9. ixft24n90p ixfh24n90p.pdf Size:122K _ixys

IXFH23N80Q
IXFH23N80Q

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM ? ? RDS(on) ? 420m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 300ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V TAB VGSS Continuous 30

5.10. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

IXFH23N80Q
IXFH23N80Q

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 ? ? ? ? ? ? IXFH/IXFT 26N50Q 500 V 26 A 0.20 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V (TAB)

5.11. ixfh20n80p ixft20n80p ixfv20n80p.pdf Size:326K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P ? ? RDS(on) ? 520 m ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 20N80PS ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V (TAB) VGSS Continuou

5.12. ixfh26n60q ixft26n60q.pdf Size:107K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs ? RDS(on) = 0.25 ? ? ? ? Q-Class ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 T

5.13. ixfh26n60p ixft26n60p ixfv26n60p.pdf Size:197K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET ? ? ? ? IXFV26N60P RDS(on) ? 270 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV26N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V G VGSM Transient 40

5.14. ixfh20n80q ixfk20n80q ixft20n80q.pdf Size:149K _ixys

IXFH23N80Q
IXFH23N80Q

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs ? ? IXFT20N80Q RDS(on) = 0.42 ? ? ? Q-Class N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V (TAB) VGS Continuous 20

5.15. ixfh22n55.pdf Size:69K _ixys

IXFH23N80Q
IXFH23N80Q

HiPerFETTM IXFH 22 N55 VDSS = 550 V Power MOSFET ID (cont) = 22 A RDS(on) = 0.27 W N-Channel Enhancement Mode trr ? 250 ns Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 550 V VDGR TJ = 25C to 150C; RGS = 1 MW 550 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C22 A IDM TC = 25C, pulse

データーシート... IXFH21N50F , IXFH21N50Q , IXFH22N50P , IXFH22N60P , IXFH22N60P3 , IXFH230N075T2 , IXFH230N10T , IXFH23N60Q , IRF840 , IXFH24N50Q , IXFH24N80P , IXFH24N90P , IXFH26N50P , IXFH26N55Q , IXFH26N60P , IXFH28N50F , IXFH28N50Q .

 


IXFH23N80Q
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