BUK752R7-30B トランジスタ データシート

 

BUK752R7-30B トランジスタ データシート

品 名: BUK752R7-30B

MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 300 W

ド レ イ ン ・ ソ ー ス 電 圧 (Vds): 30 V

ド レ イ ン 電 流 (直 流) (Id): 75 A

直 流 オ ン 抵 抗 (Rds): 0.0027 Ohm

パ ッ ケ ー ジ : TO220AB

BUK752R7-30B トランジスタ パラメトリック検索

 

BUK752R7-30B Datasheet (PDF)

3.1. buk752r3-40c.pdf Size:222K _philips

BUK752R7-30B
BUK752R7-30B

BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance autom

4.1. buk7528-55.pdf Size:52K _philips

BUK752R7-30B
BUK752R7-30B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 40 A features very low on-state resistanc

4.2. buk7523-75a buk7623-75a.pdf Size:310K _philips

BUK752R7-30B
BUK752R7-30B

BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

4.3. buk7524-55 3.pdf Size:52K _philips

BUK752R7-30B
BUK752R7-30B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7524-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 45 A features very low on-state resistanc

4.4. buk7524 buk7624 55a-01.pdf Size:313K _philips

BUK752R7-30B
BUK752R7-30B

BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

4.5. buk7524-55a buk7624-55a.pdf Size:314K _philips

BUK752R7-30B
BUK752R7-30B

BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101

4.6. buk7528-55a buk7628-55a.pdf Size:96K _philips

BUK752R7-30B
BUK752R7-30B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench technology w

4.7. buk7520-55 2.pdf Size:52K _philips

BUK752R7-30B
BUK752R7-30B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 52 A features very low on-state resistanc

4.8. buk7520-100a buk7620-100a.pdf Size:315K _philips

BUK752R7-30B
BUK752R7-30B

BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7520-100A in SOT78 (TO-220AB) BUK7620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolog

4.9. buk7526-100b buk7626-100b.pdf Size:294K _philips

BUK752R7-30B
BUK752R7-30B

BUK75/7626-100B TrenchMOS standard level FET Rev. 01 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state re

4.10. buk7528 buk7628-100a.pdf Size:80K _philips

BUK752R7-30B
BUK752R7-30B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench technolog

データーシート... BUK7516-55A , BUK7520-100A , BUK7520-55A , BUK7523-75A , BUK7526-100B , BUK7528-100A , BUK7528-55A , BUK752R3-40C , 2SK117 , BUK7535-100A , BUK7535-55A , BUK753R1-40B , BUK753R4-30B , BUK7540-100A , BUK754R0-40C , BUK754R0-55B , BUK754R3-40B .

 


BUK752R7-30B
  BUK752R7-30B
  BUK752R7-30B
  BUK752R7-30B
 
BUK752R7-30B
  BUK752R7-30B
  BUK752R7-30B
  BUK752R7-30B
 

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