2SD1407 トランジスタ データシート

 

2SD1407 トランジスタ データシート

品名: 2SD1407

材料: Si

種類: NPN

コレクタ損失 (Pc): 30 W

コレクタ·ベース間電圧 (Vcb): 100 V

コレクタ·エミッタ間電圧 (Vce): 100 V

エミッタ·ベース間電圧 (Veb): 5 V

コレクタ電流(直流) (Ic): 5 A

最大ジャンクション温度 (Tj): 150 °C

トランジション周波数(fT): 12 MHz

コレクタ出力容量 (Cob): 100 pF

直流電流増幅率 (hfe): 40

パッケージ: ISO220

2SD1407 トランジスタ パラメトリック検索

 

2SD1407 Datasheet (PDF)

1.1. 2sd1407a.pdf Size:131K _toshiba

2SD1407
2SD1407

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emi

1.2. 2sd1407.pdf Size:69K _wingshing

2SD1407

2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junct

1.3. 2sd1407.pdf Size:162K _inchange_semiconductor

2SD1407
2SD1407

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1016 APPLICATIONS Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum

データーシート ... 2SD1405BL , 2SD1405GR , 2SD1405V , 2SD1406 , 2SD1406G , 2SD1406GR , 2SD1406O , 2SD1406Y , 2N3866 , 2SD1407G , 2SD1407O , 2SD1407R , 2SD1407Y , 2SD1408 , 2SD1408O , 2SD1408R , 2SD1408Y .

 


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