2SD668A トランジスタ データシート

 

2SD668A トランジスタ データシート

品名: 2SD668A

材料: Si

種類: NPN

コレクタ損失 (Pc): 1 W

コレクタ·ベース間電圧 (Vcb): 180 V

コレクタ·エミッタ間電圧 (Vce): 160 V

コレクタ電流(直流) (Ic): 0.05 A

最大ジャンクション温度 (Tj): 175 °C

トランジション周波数(fT): 140 MHz

コレクタ出力容量 (Cob): 2.5 pF

直流電流増幅率 (hfe): 60

パッケージ: TO126

2SD668A トランジスタ パラメトリック検索

 

2SD668A Datasheet (PDF)

5.1. 2sd667a-b-c-d 2sd667-b-c-d.pdf Size:557K _update

2SD668A
2SD668A

2SD667(A)-B MCC Micro Commercial Components TM 2SD667(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SD667(A)-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Epoxy meets UL 94 V-0 flammability rating NPN Silicon • Moisture Sensitivity Level 1 • Capable of 0.9Watts of Power Dissipation. • Capable of 0.9Watts of Power Dissipation. Pla

5.2. 2sd667l.pdf Size:284K _update

2SD668A
2SD668A

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SD667L Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Low Frequency Power Amplifier NPN • Complementary Pair with 2SB647/A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Transistor • Lead Free Finish/Rohs Compl

5.3. 2sd669-b-c-d 2sd669a-b-c.pdf Size:265K _update

2SD668A
2SD668A



5.4. 2sd669al.pdf Size:247K _update

2SD668A
2SD668A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO – 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Volt

5.5. 2sd669am-a.pdf Size:163K _update

2SD668A
2SD668A

RoHS RoHS 2SD669AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose NPN Power Transistor 1.5A / 120V, 160V / 20W 2.7± 0.4 8.0±0.5 +0.15 Ø3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29±0.5 2.29±0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SB649AM/2SB649AM-A NPN E All dimensions in millimeters

5.6. 2sd662.pdf Size:39K _panasonic

2SD668A
2SD668A

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Rati

5.7. 2sd661.pdf Size:51K _panasonic

2SD668A
2SD668A

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Ma

5.8. 2sd662 e.pdf Size:43K _panasonic

2SD668A
2SD668A

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Rati

5.9. 2sd661 e.pdf Size:55K _panasonic

2SD668A
2SD668A

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Ma

5.10. 2sd667.pdf Size:160K _utc

2SD668A
2SD668A

UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL ? DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. ? FEATURES * Low frequency power amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD667L-x-T9N-B 2SD667G-x-T9N

5.11. 2sd669a.pdf Size:36K _hitachi

2SD668A
2SD668A

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 55V

5.12. 2sd667.pdf Size:32K _hitachi

2SD668A
2SD668A

2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base voltage VEBO 55V Collec

5.13. 2sd666.pdf Size:413K _hitachi

2SD668A
2SD668A

5.14. 2sd669.pdf Size:32K _hitachi

2SD668A
2SD668A

2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 12

5.15. 2sd669-669a.pdf Size:236K _secos

2SD668A
2SD668A

2SD669/2SD669A NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 2.7± 0.2 7.6±0.2 FEATURES 1.3± 0.2 4.0±0.1 Power dissipation 10.8±0.2 PCM : 1mW(Tamb=25?) O3.1± 0.1 Collector current 1 2 3 2.2±0.1 ICM : 1.5 A 1.27±0.1 Collector-base voltage 15.5±0.2 V(BR)CBO :

5.16. 2sd667a.pdf Size:64K _secos

2SD668A

2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES A D Low Frequency Power Amplifier Complementary Pair with 2SB647A B K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 N G H 1 Emitter

5.17. 2sd669 2sd669a.pdf Size:280K _inchange_semiconductor

2SD668A
2SD668A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SB649/649A Ў¤ High breakdown voltage VCEO:120/160V Ў¤ High current 1.5A Ў¤ Low saturation voltage,excellent hFE linearity APPLICATIONS Ў¤ For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connec

5.18. 2sd665.pdf Size:120K _inchange_semiconductor

2SD668A
2SD668A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD665 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SB645 Ў¤ High power dissipation APPLICATIONS Ў¤ Power amplifier applications Ў¤ Power switching applications Ў¤ DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCE

5.19. 2sd667-2sd667a to-92l.pdf Size:215K _lge

2SD668A
2SD668A

2SD667/2SD667A TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Value Units 0.550 13.800 14.200 VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Voltage

5.20. 2sd667-2sd667a to-92mod.pdf Size:257K _lge

2SD668A
2SD668A

2SD667/2SD667A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.800 6.200 Complementary pair with 2SB647/A 8.400 MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.800 0.900 1.100 Symbol Parameter Value Units 0.400 VCBO Collector- Base Voltage 120 V 0.600 VCEO Collector-Emitter Voltage 2SD667 80 13.

5.21. 2sd669-2sd669a to-126.pdf Size:180K _lge

2SD668A
2SD668A

2SD669/2SD669A(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Low frequency power amplifier complementary pair 1.500 with 2SB649/A 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.200 10.600 0.000 0.300 Symbol Parameter Value Units11.000 VCBO Collector- Base Voltage 180 V 2.100

5.22. 2sd669.pdf Size:245K _wietron

2SD668A
2SD668A

2SD669/2SD669A NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol 2SD669 2SD669A Unit VCBO 180 180 V Collector-Emitter Voltage VCEO 120 160 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 V Collector Current IC 1.5 A PD 1.0 W Power Disspation Tj 150 ?C Junction Temper

5.23. 2sd669a.pdf Size:473K _blue-rocket-elect

2SD668A
2SD668A

2SD669(A)(BR3DA669(A)QF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 与 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF)互补。 Complementary pair with 2SB649(BR3CA649QF)/2SB649A(BR3CA649AQF). 用途 / Applications 用于低频功率放大。 Low frequency power

5.24. 2sd667a.pdf Size:557K _blue-rocket-elect

2SD668A
2SD668A

2SD667(A)(BR3DG667(A)L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 与 2SB647(BR3CG647L)/2SB647A(BR3CG647AL)互补。 Complementary pair with 2SB647(BR3CG647L)/2SB647A(BR3CG647AL). 用途 / Applications 用于低频功率放大。 Low frequency power ampli

データーシート ... 2SD663 , 2SD664 , 2SD665 , 2SD666 , 2SD666A , 2SD667 , 2SD667A , 2SD668 , BC547C , 2SD668AB , 2SD668AC , 2SD668B , 2SD668C , 2SD668D , 2SD669 , 2SD669A , 2SD669AB .

 


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