431 トランジスタ データシート

 

431 トランジスタ データシート

品名: 431

材料: Si

種類: NPN

コレクタ損失 (Pc): 125 W

コレクタ·ベース間電圧 (Vcb): 400 V

コレクタ·エミッタ間電圧 (Vce): 325 V

エミッタ·ベース間電圧 (Veb): 5 V

コレクタ電流(直流) (Ic): 7 A

最大ジャンクション温度 (Tj): 150 °C

トランジション周波数(fT): 4 MHz

直流電流増幅率 (hfe): 40

パッケージ: TO3

431 トランジスタ パラメトリック検索

431 Datasheet PDF:

1.1. 2n431_2n432.pdf Size:297K _general_electric

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1.2. 2sa1431.pdf Size:181K _toshiba

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1.3. 2sc4317.pdf Size:467K _toshiba

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2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base cu

1.4. 2sc4315.pdf Size:463K _toshiba

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2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector

1.5. sft1431.pdf Size:492K _sanyo

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SFT1431 Ordering number : ENA1624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1431 Applications Features Motor drive application. Low ON-resistance. 4V drive. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain C

1.6. 2sk1431.pdf Size:104K _sanyo

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Ordering number:EN3569 N-Channel Silicon MOSFET 2SK1431 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2063A Converters. [2SK1431] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

1.7. mch6431.pdf Size:362K _sanyo

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MCH6431 Ordering number : ENA1852 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6431 Applications Features ON-resistance RDS(on)1=42m (typ.) ? 4V drive Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage

1.8. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas

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Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2S

1.9. 2sc5200_fjl4315.pdf Size:476K _fairchild_semi

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January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-264 1 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity

1.10. fjn4311r.pdf Size:26K _fairchild_semi

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FJN4311R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K?) Complement to FJN3311R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage

1.11. fja4313.pdf Size:83K _fairchild_semi

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FJA4313 Audio Power Amplifier High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V

1.12. fjn4310r.pdf Size:32K _fairchild_semi

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FJN4310R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K?) Complement to FJN3310R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage

1.13. fjn4312r.pdf Size:26K _fairchild_semi

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FJN4312R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K?) Complement to FJN3312R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage

1.14. fds9431a_f085.pdf Size:358K _fairchild_semi

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February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 ? @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 ? @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and y

1.15. fjaf4310.pdf Size:87K _fairchild_semi

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FJAF4310 Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V

1.16. fjl4315.pdf Size:64K _fairchild_semi

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FJL4315 Audio Power Amplifier High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V

1.17. fja4310.pdf Size:199K _fairchild_semi

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October 2008 FJA4310 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter

1.18. fds9431a.pdf Size:75K _fairchild_semi

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September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 ? @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 ? @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and yet main

1.19. 2sc5242_fja4313.pdf Size:468K _fairchild_semi

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January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A TO-3P 1 High Power Dissipation : 130watts 1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity f

1.20. fjn4314r.pdf Size:27K _fairchild_semi

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FJN4314R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K?, R2=47K?) Complement to FJN3314R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-B

1.21. fjn4313r.pdf Size:27K _fairchild_semi

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FJN4313R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K?, R2=47K?) Complement to FJN3313R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Ba

1.22. irfl4310.pdf Size:313K _international_rectifier

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PD - 91368B IRFL4310 HEXFET Power MOSFET D VDSS = 100V l Surface Mount l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.20W l Ease of Paralleling G l Advanced Process Technology l Ultra Low On-Resistance ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

1.23. irfl4315.pdf Size:121K _international_rectifier

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PD - 94445 IRFL4315 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 150V 185m? ?@VGS = 10V 2.6A ? ? Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) SOT-223 Fully Characterized Avalanche Voltage and Current Abs

1.24. 2sc5431.pdf Size:51K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel Pin 3 (

1.25. u430_u431.pdf Size:60K _vishay

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1.26. si4431cd.pdf Size:269K _vishay

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New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Definition 0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.049 at VGS = - 4.5 V - 5.8 APPLICATIONS Load Switch Battery Switch SO-8 S S 1 8 D S D 2 7 G S

1.27. si4431bd.pdf Size:224K _vishay

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Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Available 0.030 at VGS = - 10 V - 7.5 TrenchFET Power MOSFETs - 30 0.050 at VGS = - 4.5 V - 5.8 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BD

1.28. si4431dy.pdf Size:70K _vishay

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Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% UIS Tested 0.040 @ VGS = 10 V "5.8 30 30 0.070 @ VGS = 4.5 V "4.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4431DY-T1 P-Channel MOSFET Si4431DY-T1E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA =

1.29. si4431ady.pdf Size:75K _vishay

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Si4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.2 30 30 0.052 @ VGS = 4.5 V 5.5 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4431ADY-T1 P-Channel MOSFET Si4431ADY-T1E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OT

1.30. sib431ed.pdf Size:224K _vishay

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1.31. si4310bd.pdf Size:226K _vishay

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Si4310BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A) Definition 0.011 at VGS = 10 V 10 TrenchFET Power MOSFET Channel-1 0.016 at VGS = 4.5 V 8.2 100 % Rg Tested 30 Compliant to RoHS Directive 2002/95/EC 0.0085 at VGS = 10 V 14 Channel-2 0.0095

1.32. sia431dj.pdf Size:124K _vishay

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1.33. 2n6430_2n6431_2n6432_2n6433.pdf Size:104K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

1.34. zvn4310g.pdf Size:40K _diodes

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SOT223 N-CHANNEL ENHANCEMENT ZVN4310G MODE VERTICAL DMOS FET ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS(ON) = .54? D APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive S PARTMARKING DETAIL - ZVN4310 D G ABSOLUTE MAXIMUM RATINGS. 00 PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25C ID 1.67 A Pulsed Drain C

1.35. zvn4310a.pdf Size:57K _diodes

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N-CHANNEL ENHANCEMENT ZVN4310A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES . * 100 Volt VDS * RDS(on) = 0.5? * Spice model available D 1MHz G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V ID=3A Continuous Drain Current at Tamb=25C ID 0.9 A Practical Continuous Drain Current at IDP 1A Tamb=25C Pulsed Dra

1.36. 2sk2431.pdf Size:28K _hitachi

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2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2431 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V

1.37. cv7431.pdf Size:10K _semelab

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CV7431 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

1.38. cv7431-o.pdf Size:10K _semelab

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CV7431-O Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, J

1.39. ssp7431p.pdf Size:558K _secos

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SSP7431P -17A, -30V, RDS(ON) 13 m? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES ? Low RDS(on) provides h

1.40. 2sd1431.pdf Size:28K _wingshing

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NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5

1.41. sta431a.pdf Size:37K _sanken-ele

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PNP + NPN H-bridge External dimensions STA (10-pin) STA431A D Absolute maximum ratings (Ta=25C) Ratings Symbol Unit NPN PNP VCBO 60 60 V VCEO 60 60 V VEBO 6 6V IC 3 3A ICP 6 (PW?10ms, Du?50%) 6 (PW?10ms, Du?50%) A 4 (Ta=25C) PT W 20 (Tc=25C) Tj 150 C Tstg 40 to +150 C Equivalent circuit diagram 10 6 8 7 9 3 5 24 1 Characteristic curves IC-VCE Characteris

1.42. 2sd1431.pdf Size:92K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1431 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitte

1.43. 2sc4313.pdf Size:263K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V V

1.44. 2sc1431.pdf Size:127K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use in high frequency power amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

1.45. cem4311.pdf Size:387K _cet

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CEM4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -9.3A, RDS(ON) = 18m? @VGS = -10V. RDS(ON) = 30m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise n

1.46. ced4311_ceu4311.pdf Size:401K _cet

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CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18m? @VGS = -10V. RDS(ON) = 30m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RA

1.47. gm431.pdf Size:272K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM431 DESCRIPTION&SYMBOL ¦DESCRIPTION&SYMBOL ????? DESCRIPTION&SYMBOL ?????????? 36 ????????? MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Cathode to Anode Voltage VKA 37 V ?

1.48. wtk9431.pdf Size:1067K _wietron

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WTK9431 Surface Mount P-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free -3.5 AMPERES DRAIN SOURCE VOLTAGE Features: -20 VOLTAGE * Super high dense * Cell design for low RDS(ON) * R <130m?@VGS = -4.5V DS(ON) * R <180m?@VGS = -2.5V DS(ON) * Simple Drive Requirement * Lower On-resistance 1 * Fast Switching SOP-8 Description: The WTK9431 provide the designer with t

1.49. ao4310.pdf Size:534K _aosemi

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AO4310 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4310 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 27A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 3.1mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 4.2mΩ RDS(ON) and Crss.In addi

1.50. ao4314.pdf Size:570K _aosemi

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AO4314 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4314 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 20A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 6mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 8.5mΩ RDS(ON) and Crss.In additi

1.51. ao4312.pdf Size:575K _aosemi

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AO4312 36V N-Channel MOSFET General Description Product Summary VDS 36V The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 23A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) < 4.5mΩ minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 6.2mΩ RDS(ON) and Crss.In addi

1.52. ap9431gh-hf.pdf Size:94K _a-power

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AP9431GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Lower Gate Charge D BVDSS 55V Ў Simple Drive Requirement RDS(ON) 24m? Ў Fast Switching Characteristic ID 23.5A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, ? S TO-25

1.53. apm4431k.pdf Size:208K _anpec

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APM4431K P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-5.3A , RDS(ON)=32mΩ (typ.) @ VGS=-10V RDS(ON)=50mΩ (typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 SOP-8 Package (1, 2, 3) S S S Lead Free Available (RoHS Compliant) Applications (4)G • Power Management in Notebook Computer, Portable Equipment and Batter

1.54. apm4317k.pdf Size:205K _anpec

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APM4317K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-9A, D D RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, P

1.55. apm4315k.pdf Size:207K _anpec

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APM4315K P-Channel Enhancement Mode MOSFET Features Pin Description D D -30V/-11A, D D RDS(ON)= 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-4.5V S S Super High Dense Cell Design S G Reliable and Rugged Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 1, 2, 3 ) S S S Applications (4) G Power Management in Notebook Computer, Port

1.56. sm4311pskp.pdf Size:294K _sino

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SM4311PSKP ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-100A, D D RDS(ON) =2.8m (max.) @ VGS =-10V D D RDS(ON) =4.3m (max.) @ VGS =-4.5V Reliable and Rugged G Pin 1 S S Lead Free and Green Devices Available S DFN5x6-8 (RoHS Compliant) HBM ESD Capability level of 6.6KV typical ( 5,6,7,8 ) D D D D Note : The diode connected between the gate and sour

1.57. sm4310psk.pdf Size:262K _sino

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SM4310PSK ® P-Channel Enhancement Mode MOSFET Features Pin Description D D D -30V/-9.3A, D RDS(ON) = 24m (max.) @ VGS =-10V RDS(ON) = 38m (max.) @ VGS =-4.5V S S Reliable and Rugged S G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D D D (4) Applications G Power Management in Notebook Computer, Portable Equipment and Battery P

1.58. 2sc4317.pdf Size:1814K _kexin

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SMD Type Transistors NPN Transistors 2SC4317 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=40mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

1.59. ao4310.pdf Size:2160K _kexin

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SMD Type MOSFET N-Channel MOSFET AO4310 (KO4310) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 27 A (VGS = 10V) ● RDS(ON) < 3.1mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.60. ao4314.pdf Size:2238K _kexin

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SMD Type MOSFET N-Channel MOSFET AO4314 (KO4314) SOP-8 ■ Features ● VDS (V) = 36V 1.50 0.15 ● ID = 20 A (VGS = 10V) ● RDS(ON) < 6mΩ (VGS = 10V) ● RDS(ON) < 8.5mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

1.61. ao4312.pdf Size:2238K _kexin

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SMD Type MOSFET N-Channel MOSFET AO4312 (KO4312) SOP-8 ■ Features ● VDS (V) = 36V ● ID = 23 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.5mΩ (VGS = 10V) ● RDS(ON) < 6.2mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source D D 8 Drain 4 Gate G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 36

データーシート ... 41501 , 41502 , 41503 , 41504 , 41505 , 41506 , 41508 , 423 , BC548B , 43104 , 45190 , 45191 , 45192 , 45193 , 45194 , 45195 , 4NU72 .

 


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BJT MPQ7093 | MPQ7053 | MPQ7043 | MPQ6700 | MPQ6502 | MPQ6100A | MPQ6002 | MPQ3799 | MPQ3798 | MPQ3762 | MPQ3725A | MPQ3725 | MPQ3467 | MP6901 | MP6301 | MP4T856 | MP4T802 | MP4T801 | MP4T645 | MP4T6365 |



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