2N2907 トランジスタ データシート

 

2N2907 トランジスタ データシート

品名: 2N2907

材料: Si

種類: PNP

コレクタ損失 (Pc): 0.4 W

コレクタ·ベース間電圧 (Vcb): 60 V

コレクタ·エミッタ間電圧 (Vce): 40 V

エミッタ·ベース間電圧 (Veb): 5 V

コレクタ電流(直流) (Ic): 0.6 A

最大ジャンクション温度 (Tj): 200 °C

トランジション周波数(fT): 200 MHz

コレクタ出力容量 (Cob): 8 pF

直流電流増幅率 (hfe): 35

パッケージ: TO18

2N2907 トランジスタ パラメトリック検索

 

2N2907 Datasheet (PDF)

1.1. st2n2907-a.pdf Size:1188K _update

2N2907
2N2907



1.2. 2n2907aubc.pdf Size:100K _upd

2N2907
2N2907

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

1.3. 2n2907acecc.pdf Size:10K _upd

2N2907

2N2907ACECC Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.6A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX

1.4. 2n2907ac3a.pdf Size:200K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

1.5. 2n2907ahr.pdf Size:502K _upd

2N2907
2N2907

2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value 1 2 3 BVCEO 60 V TO-18 IC (max) 0.6 A 3 3 HFE at 10 V - 150 mA > 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • European preferred part list EPPL Figure 1. Internal schematic diagram Description T

1.6. 2n2907ac3c.pdf Size:200K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

1.7. 2n2907al.pdf Size:100K _upd

2N2907
2N2907

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2906A 2N2907A JANSD – 10K Rads (Si) 2N2906AL 2N2907AL JANSP – 30K Rads (Si) 2N2906AUA 2N2907AUA JANS

1.8. 2n2907ac1b.pdf Size:563K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

1.9. 2n2907acsmcecc.pdf Size:22K _upd

2N2907
2N2907

2N2907ACSM SEME LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 • SILICON PLANAR EPITAXIAL PNP (0.02 ± 0.004) 0.31 rad. (0.012) TRANSISTOR 3 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 21 • CE

1.10. 2n2907adcsm.pdf Size:33K _upd

2N2907
2N2907

2N2907ADCSM SEME LAB DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 • DUAL SILICON PLANAR EPITAXIAL (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) PNP TRANSISTORS 2 3 • HERMETIC CERAMIC

1.11. 2n2907acsm4r.pdf Size:144K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter V

1.12. 2n2907ac1a.pdf Size:563K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

1.13. 2n2907aua.pdf Size:89K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AUA • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

1.14. 2n2907ac3b.pdf Size:200K _upd

2N2907
2N2907

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC3 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Volt

1.15. mtp2n2907a.pdf Size:240K _motorola

2N2907
2N2907

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2907A/D Amplifier Transistor PNP Silicon P2N2907A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 60 Vdc 3 CollectorBase Voltage VCBO 60 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 5.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 m

1.16. 2n2907 2n2907a 1.pdf Size:52K _philips

2N2907
2N2907

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors 1997 May 30 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 ba

1.17. 2n2905a 2n2907a.pdf Size:727K _st

2N2907
2N2907

2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCB

1.18. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st

2N2907
2N2907

2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are si- licon planar epitaxial PNP transistors in Jedec TO- 39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi- gned for high-speed saturated switching and gene- ral purpose applications. 2N2904/2N2905 approved to CECC 50002- 10

1.19. 2n2906 2n2907.pdf Size:96K _central

2N2907
2N2907

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.20. 2n2907 2n2907a(to-18).pdf Size:453K _mcc

2N2907
2N2907

MCC 2N2907 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2N2907A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features High current (max.600mA) Low voltage (max.60V) PNP Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol R

1.21. p2n2907a.pdf Size:162K _onsemi

2N2907
2N2907

P2N2907A Amplifier Transistor PNP Silicon Features These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO --60 Vdc Collector--Base Voltage VCBO --60 Vdc 3 Emitter--Base Voltage VEBO --5.0 Vdc EMITTER Collector Current -- Continuous IC --600 mAdc Total Device Dissipation @ TA =25C PD 625 mW Dera

1.22. 2n2907aub.pdf Size:242K _optek

2N2907
2N2907

Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.23. 2n2907aua.pdf Size:95K _optek

2N2907
2N2907

1.24. p2n2907 a.pdf Size:91K _cdil

2N2907
2N2907

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Col

1.25. 2n2907as.pdf Size:377K _first_silicon

2N2907
2N2907

SEMICONDUCTOR 2N2907AS TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-23 package which 3 is designed for low power surface mount applications. 2 Features 1 compliance with RoHS requirements. • We declare that the material of product SOT– 23 ORDERING INFORMATION †

1.26. 2n2907au.pdf Size:265K _first_silicon

2N2907
2N2907

SEMICONDUCTOR 2N2907AU TECHNICAL DATA General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-323/SC-70 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING IN

データーシート ... 2N2905L , 2N2905S , 2N2906 , 2N2906A , 2N2906ACSM , 2N2906ADCSM , 2N2906AQF , 2N2906CSM , 2SC1740 , 2N2907A , 2N2907ACSM , 2N2907ACSM4 , 2N2907AQF , 2N2907AUB , 2N2907CSM , 2N2908 , 2N2909 .

 


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