C400 トランジスタ データシート

 

C400 トランジスタ データシート

品名: C400

材料: Si

種類: NPN

コレクタ損失 (Pc): 0.4 W

コレクタ·ベース間電圧 (Vcb): 60 V

コレクタ·エミッタ間電圧 (Vce): 30 V

エミッタ·ベース間電圧 (Veb): 10 V

最大ジャンクション温度 (Tj): 175 °C

トランジション周波数(fT): 40 MHz

コレクタ出力容量 (Cob): 25 pF

直流電流増幅率 (hfe): 40

パッケージ: TO18

C400 トランジスタ パラメトリック検索

 

C400 Datasheet (PDF)

1.1. ptc4001t 2.pdf Size:50K _philips2

C400
C400

DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor 1997 Feb 18 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor PTC4001T FEATURES QUICK REFERENCE DATA Microwave performance up to Th =25C in an oscillator circuit up to 3 GHz. Diffused emi

1.2. 2sc4002.pdf Size:77K _sanyo

C400
C400

Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit:mm Adoption of MBIT process. 2003B Excellent hFE linearity. [2SC4002] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Emitter 2 : Collector 3 : Base 1 2 3 SANYO : NP JEDEC : TO-92 1.3 1.3 EIAJ : SC-43 Specificat

1.3. 2sc4005.pdf Size:86K _sanyo

C400
C400

Ordering number:EN2271A NPN Planar Type Silicon Darlington Transistor 2SC4005 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4005] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8V betwee

1.4. 2sc4003.pdf Size:79K _sanyo

C400
C400

Ordering number:EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit:mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SC4003] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SC4003] 1 : Base 2 : Collector 3 : Emitter 4 : Collecto

1.5. 2sc4006.pdf Size:79K _sanyo

C400
C400

Ordering number:EN2272A NPN Planar Type Silicon Darlington Transistor 2SC4006 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4006] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8V betwee

1.6. 2sc4001.pdf Size:130K _nec

C400
C400

1.7. 2sc4004.pdf Size:59K _panasonic

C400
C400

Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat si

1.8. 2sc4004.pdf Size:156K _jmnic

C400
C400

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION ·With TO-220Fa package ·Satisfactory linearity of foward current transfer ratio hFE · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector

1.9. 2sc4007.pdf Size:272K _inchange_semiconductor

C400
C400

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATING

1.10. 2sc4008.pdf Size:267K _inchange_semiconductor

C400
C400

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1635 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATING

1.11. 2sc4004.pdf Size:119K _inchange_semiconductor

C400
C400

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Wide area of safe operation (ASO) Ў¤ High-speed switching Ў¤ High collector to base voltage VCBO APPLICATIONS Ў¤ For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (T

1.12. 2sc4003.pdf Size:197K _lge

C400
C400

2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0

データーシート ... C25-12 , C25-28 , C266 , C266P , C2-8 , C2-8Z , C3-12 , C3-28 , 2N4403 , C40-28 , C407 , C420 , C424 , C425 , C426 , C428 , C434 .

 


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