KSC5030F トランジスタ データシート

 

KSC5030F トランジスタ データシート

品名: KSC5030F

材料: Si

種類: NPN

コレクタ損失 (Pc): 60 W

コレクタ·ベース間電圧 (Vcb): 1100 V

コレクタ·エミッタ間電圧 (Vce): 800 V

エミッタ·ベース間電圧 (Veb): 7 V

コレクタ電流(直流) (Ic): 6 A

最大ジャンクション温度 (Tj): 150 °C

トランジション周波数(fT): 15 MHz

コレクタ出力容量 (Cob): 35 pF

直流電流増幅率 (hfe): 10

パッケージ: ISOTO3

KSC5030F トランジスタ パラメトリック検索

 

KSC5030F Datasheet (PDF)

1.1. ksc5030f.pdf Size:142K _fairchild_semi

KSC5030F
KSC5030F

KSC5030F High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collector Diss

1.2. ksc5030f.pdf Size:116K _inchange_semiconductor

KSC5030F
KSC5030F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

3.1. ksc5030pwd.pdf Size:24K _samsung

KSC5030F
KSC5030F

KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25 ) P

データーシート ... KSC5028N , KSC5028O , KSC5028R , KSC5029 , KSC5029N , KSC5029O , KSC5029R , KSC5030 , BC558 , KSC5030N , KSC5030O , KSC5030R , KSC5031 , KSC5031N , KSC5031O , KSC5031R , KSC5032 .

 


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製品情報

最終更新

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