KSC5061 トランジスタ データシート

 

KSC5061 トランジスタ データシート

品名: KSC5061

材料: Si

種類: NPN

コレクタ損失 (Pc): 50 W

コレクタ·ベース間電圧 (Vcb): 800 V

コレクタ·エミッタ間電圧 (Vce): 500 V

エミッタ·ベース間電圧 (Veb): 7 V

コレクタ電流(直流) (Ic): 5 A

最大ジャンクション温度 (Tj): 150 °C

トランジション周波数(fT): 18 MHz

コレクタ出力容量 (Cob): 80 pF

直流電流増幅率 (hfe): 15

パッケージ: TO220

KSC5061 トランジスタ パラメトリック検索

 

KSC5061 Datasheet (PDF)

5.1. ksc5027.pdf Size:53K _fairchild_semi

KSC5061
KSC5061

KSC5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Puls

5.2. ksc5019.pdf Size:38K _fairchild_semi

KSC5061
KSC5061

KSC5019 Low Saturation VCE(sat)=0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A ICP

5.3. ksc5086 .pdf Size:64K _fairchild_semi

KSC5061
KSC5061

KSC5086 HIgh Definition Color Display Horizontal Equivalent Circuit Deflection Output C (Damper Diode Built In) High Collector-Base Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.) B TO-3PF 1 50? typ. 1.Base 2.Collector 3.Emitter E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VC

5.4. ksc5030f.pdf Size:142K _fairchild_semi

KSC5061
KSC5061

KSC5030F High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collector Diss

5.5. ksc5042f.pdf Size:56K _fairchild_semi

KSC5061
KSC5061

KSC5042F High Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO C

5.6. ksc5026m.pdf Size:120K _fairchild_semi

KSC5061
KSC5061

January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 1.5 A

5.7. ksc5024.pdf Size:58K _fairchild_semi

KSC5061
KSC5061

KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 2

5.8. ksc5039f.pdf Size:58K _fairchild_semi

KSC5061
KSC5061

KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A I

5.9. ksc5039.pdf Size:54K _fairchild_semi

KSC5061
KSC5061

KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Curr

5.10. ksc5021.pdf Size:302K _fairchild_semi

KSC5061
KSC5061

October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC Collector C

5.11. ksc5027.pdf Size:24K _samsung

KSC5061
KSC5061

KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A 1.Base 2.Collector 3.Emitter C

5.12. ksc5039f.pdf Size:24K _samsung

KSC5061
KSC5061

KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W J

5.13. ksc5027f.pdf Size:74K _samsung

KSC5061
KSC5061

KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC=25

5.14. ksc5086.pdf Size:20K _samsung

KSC5061
KSC5061

NPN TRIPLE DIFFUSED KSC5086 PLANAR SILICON TRANSISTOR HIGH DEFINITION COLOR DISPLAY TO-3PF HORIZONTAL DEFLECTION OUTPUT (DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO

5.15. ksc5021p.pdf Size:72K _samsung

KSC5061
KSC5061

KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING : tf = 0.1 (Typ) WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A 1.Base 2.Collector

5.16. ksc5039.pdf Size:23K _samsung

KSC5061
KSC5061

KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W 1.Base 2.C

5.17. ksc5030pwd.pdf Size:24K _samsung

KSC5061
KSC5061

KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25 ) P

5.18. ksc5027.pdf Size:88K _inchange_semiconductor

KSC5061
KSC5061

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION · ·With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

5.19. ksc5030f.pdf Size:116K _inchange_semiconductor

KSC5061
KSC5061

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

5.20. ksc5088.pdf Size:103K _inchange_semiconductor

KSC5061
KSC5061

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V

5.21. ksc5086.pdf Size:130K _inchange_semiconductor

KSC5061
KSC5061

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5086 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Col

5.22. ksc5089.pdf Size:125K _inchange_semiconductor

KSC5061
KSC5061

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5089 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V

5.23. ksc5039.pdf Size:138K _inchange_semiconductor

KSC5061
KSC5061

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

5.24. ksc5021.pdf Size:87K _inchange_semiconductor

KSC5061
KSC5061

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION · ·With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

5.25. ksc5031.pdf Size:109K _inchange_semiconductor

KSC5061
KSC5061

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110

データーシート ... KSC5039F , KSC5042 , KSC5045 , KSC5046 , KSC5047 , KSC5048 , KSC5054 , KSC5060 , 2N5401 , KSC5086 , KSC5088 , KSC5089 , KSC5321 , KSC5321F , KSC5326 , KSC5327 , KSC5328 .

 


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