TP3020A トランジスタ データシート

 

TP3020A トランジスタ データシート

品名: TP3020A

材料: Si

種類: NPN

コレクタ損失 (Pc): 8.75 W

コレクタ·エミッタ間電圧 (Vce): 40 V

エミッタ·ベース間電圧 (Veb): 3.5 V

コレクタ電流(直流) (Ic): 0.3 A

最大ジャンクション温度 (Tj): 200 °C

トランジション周波数(fT): 2000 MHz

コレクタ出力容量 (Cob): 5 pF

直流電流増幅率 (hfe): 15

パッケージ: 244-04

TP3020A トランジスタ パラメトリック検索

 

TP3020A Datasheet (PDF)

1.1. tp3020a.pdf Size:179K _update

TP3020A

查询TP3020A供应商 捷多邦,专业PCB打样工厂,24小时 加急出货

4.1. stp3020l.pdf Size:280K _st

TP3020A
TP3020A

STP3020L N - CHANNEL 30V - 0.019? - 40A - TO-220 STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP3020L 30 V < 0.022 ? 40 A TYPICAL R = 0.019 ? DS(on) LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION 3 This Power Mosfet is the latest development of 2 STMicroelectronics unique "Single Feature 1 Size?" strip-based process. The resulting transi- stor shows

5.1. tp3024br.pdf Size:50K _motorola

TP3020A
TP3020A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3024B/D The RF Line UHF Linear Power Transistor TP3024B The TP3024B is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB pushpull, high gain, broadband amplifier having a high degree of linearity without the need for complicated biasing circuitry. S

5.2. tp3022br.pdf Size:51K _motorola

TP3020A
TP3020A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3022B/D The RF Line UHF Power Transistor TP3022B The TP3022B is designed for commonemitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with stateofthe art ruggedness and reliability. Specified 26 Volts, 9

5.3. tp3021re.pdf Size:93K _motorola

TP3020A
TP3020A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3021/D The RF Line UHF Power Transistor TP3021 The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820960 MHz bandwidth, it has been specifically designed for use in analog and digital (GSM) systems as a medium power output device. Specified 24 Volts, 960 MHz Characteristics Output Pow

5.4. atp302.pdf Size:462K _sanyo

TP3020A
TP3020A

ATP302 Ordering number : ENA1654A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP302 Applications Features • ON-resistance RDS(on)1=10m (typ.) • Input capacitance Ciss=5400pF (typ.) Ω • 4.5V drive • Halogen free compliance Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drai

データーシート ... TPT5609-C , TSC10CT , TSC114ENND03 , TSC114TNND03 , TSC114YNND03 , TSC1203ECM , TP9383 , TP749 , BC547B , TP5002 , TP5002S , TP7L10 , TP9012NND03 , TP9013NND03 , TP9014NND03 , TP9015NND03 , N0202R .

 


TP3020A
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