BD682A トランジスタ データシート

 

BD682A トランジスタ データシート

品名: BD682A

材料: Si

種類: PNP

コレクタ損失 (Pc): 40 W

コレクタ·ベース間電圧 (Vcb): 100 V

コレクタ·エミッタ間電圧 (Vce): 100 V

エミッタ·ベース間電圧 (Veb): 5 V

コレクタ電流(直流) (Ic): 4 A

最大ジャンクション温度 (Tj): 150 °C

直流電流増幅率 (hfe): 750

パッケージ: TO225

BD682A トランジスタ パラメトリック検索

 

BD682A Datasheet (PDF)

1.1. bd682a.pdf Size:68K _update

BD682A
BD682A

PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symb

5.1. bd682g.pdf Size:102K _update

BD682A
BD682A

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com This series of plastic, medium-power silicon PNP Darlington transistors can be used as output devices in complementary 4.0 AMP DARLINGTON general-purpose amplifier applications. POWER TRANSISTORS Features PNP SILICON • High DC Current Gain - 45, 60, 80, 100 V

5.2. bd676 bd678 bd680 bd682.pdf Size:110K _motorola

BD682A
BD682A

Order this document MOTOROLA by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A Plastic Medium-Power BD678 Silicon PNP Darlingtons BD678A . . . for use as output devices in complementary generalpurpose amplifier applica- BD680 tions. High DC Current Gain BD680A hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD682 BD676, 676A, 678, 678A, 680, 680A, 682 a

5.3. bd677a bd679a bd681 bd678a bd680a bd682.pdf Size:87K _st

BD682A
BD682A

BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION LINEAR AND SWITCHING INDUSTRIAL 1 2 EQUIPMENT 3 SOT-32 DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitax

5.4. bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf Size:41K _st

BD682A
BD682A

BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications 1 2 Th

5.5. bd676a bd678a bd680a bd682.pdf Size:42K _fairchild_semi

BD682A
BD682A

BD676A/678A/680A/682 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V : BD68

5.6. bd676 bd678 bd680 bd682 bd684 a.pdf Size:117K _cdil

BD682A
BD682A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676A BD678, 678A BD680, 680A BD682, 684 TO126 Plastic Package E C B For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUI

5.7. hbd682.pdf Size:141K _shantou-huashan

BD682A
BD682A

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD682 █ APPLICATIONS Medium Power Linear switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-126F Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…

データーシート ... BD678AG , BD678G , BD679AG , BD679G , BD680AG , BD680G , BD681A , BD681G , B772 , BD682G , BD683A , BD684A , BD772-GR , BD772-O , BD772-R , BD772-Y , BD810G .

 


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