BDS12IG トランジスタ データシート

 

BDS12IG トランジスタ データシート

品名: BDS12IG

材料: Si

種類: NPN

コレクタ損失 (Pc): 90 W

コレクタ·ベース間電圧 (Vcb): 100 V

コレクタ·エミッタ間電圧 (Vce): 100 V

エミッタ·ベース間電圧 (Veb): 5 V

コレクタ電流(直流) (Ic): 15 A

最大ジャンクション温度 (Tj): 200 °C

トランジション周波数(fT): 3 MHz

直流電流増幅率 (hfe): 40

パッケージ: TO257AA

BDS12IG トランジスタ パラメトリック検索

 

BDS12IG Datasheet (PDF)

1.1. bds12ig.pdf Size:14K _update

BDS12IG
BDS12IG

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 • HERMETIC TO257 ISOLATED METAL PACKAGES • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0

5.1. bds12n1a.pdf Size:338K _update

BDS12IG
BDS12IG

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitt

5.2. bds12m2a.pdf Size:577K _update

BDS12IG
BDS12IG

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 100V VEBO E

5.3. bds12smd05.pdf Size:41K _update

BDS12IG
BDS12IG

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1 2 3 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVEL

5.4. bds12n1b.pdf Size:338K _update

BDS12IG
BDS12IG

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitt

5.5. bds12smd.pdf Size:41K _update

BDS12IG
BDS12IG

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom • HERMETIC METAL OR CERAMIC PACKAGES • HIGH RELIABILITY 1 2 3 • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVEL

データーシート ... BDS10N1A , BDS10N1B , BDS10SMD , BDS10SMD05 , BDS11IG , BDS11SM , BDS11SMD , BDS11SMD05 , BD679 , BDS12M2A , BDS12N1A , BDS12N1B , BDS12SMD , BDS12SMD05 , BDS13SMD , BDS13SMD05 , BDS14SMD .

 


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