BDY90S トランジスタ データシート

 

BDY90S トランジスタ データシート

品名: BDY90S

材料: Si

種類: NPN

コレクタ損失 (Pc): 70 W

コレクタ·エミッタ間電圧 (Vce): 100 V

コレクタ電流(直流) (Ic): 10 A

トランジション周波数(fT): 40 MHz

直流電流増幅率 (hfe): 30

パッケージ: TO204

BDY90S トランジスタ パラメトリック検索

 

BDY90S Datasheet (PDF)

1.1. bdy90s.pdf Size:11K _update

BDY90S

BDY90S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

5.1. bdy90.pdf Size:62K _st

BDY90S
BDY90S

BDY90 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN 1 power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear 2 applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM

5.2. bdy90p.pdf Size:62K _st

BDY90S
BDY90S

BDY90P NPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS GENERAL PURPOSE AMPLIFIERS 3 2 DC CURRENT AND BATTERY OPERATED 1 ELECTRONIC BALLAST TO-220 DESCRIPTION The BDY90P is a silicon multiepitaxial planar NPN power transistors in TO-220 case intented for use in swi

5.3. bdy90a.pdf Size:77K _inchange_semiconductor

BDY90S
BDY90S

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY90A DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VAL

5.4. bdy90.pdf Size:206K _inchange_semiconductor

BDY90S
BDY90S

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY90 DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

データーシート ... BDY27AS , BDY27CX , BDY55X , BDY58A , BDY58S , BDY60-02 , BDY71X , BDY76E , TIP41C , BFU520 , BFU520A , BFU520W , BFU520X , BFU520XR , BFU520Y , BFU530 , BFU530A .

 


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