All MOSFET. 2N6784JANTX Datasheet

 

2N6784JANTX MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6784JANTX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 15 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.25 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO205AF

2N6784JANTX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6784JANTX Datasheet (PDF)

4.1. 2n6784 irff210.pdf Size:130K _international_rectifier

2N6784JANTX
2N6784JANTX

PD - 90424C IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET?TRANSISTORS JANTXV2N6784 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF210 200V 1.5? 2.25A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

5.1. 2n6788 irff120.pdf Size:131K _international_rectifier

2N6784JANTX
2N6784JANTX

PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET?TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30? 6.0A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

5.2. 2n6782 irff110.pdf Size:131K _international_rectifier

2N6784JANTX
2N6784JANTX

PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET?TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60? 3.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la

5.3. 2n6786 irff310.pdf Size:129K _international_rectifier

2N6784JANTX
2N6784JANTX

PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET?TRANSISTORS JANTXV2N6786 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF310 400V 3.6? 1.25A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

5.4. irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf Size:99K _international_rectifier

2N6784JANTX



5.5. 2n6782.pdf Size:23K _semelab

2N6784JANTX
2N6784JANTX

2N6782 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) POWER MOSFET 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) APPLICATIONS 7.75 (0.305) min. 8.51 (0.335) dia. • FAST SWITCHING • MOTOR CONTROLS 5.08 (0.200) typ. • POWER SUPPLIES 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.03

5.6. 2n6786.pdf Size:12K _semelab

2N6784JANTX

2N6786 Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 400V 2.54 ID = 1.25A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 3.6? ? ? ? 1.14

Datasheet: 2N6782JANTX , 2N6782JANTXV , 2N6782LCC4 , 2N6782-SM , 2N6783 , 2N6783LCC4 , 2N6783-SM , 2N6784 , IRF3205 , 2N6784JANTXV , 2N6784SM , 2N6785 , 2N6786 , 2N6786JANTX , 2N6786JANTXV , 2N6787 , 2N6787LCC4 .

 


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