All MOSFET. BUK9611-55A Datasheet

 

BUK9611-55A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9611-55A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 166 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 75 A

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: D2PAK

BUK9611-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9611-55A Datasheet (PDF)

1.1. buk9511-55a buk9611-55a.pdf Size:341K _philips

BUK9611-55A
BUK9611-55A

BUK9511-55A; BUK9611-55A TrenchMOS™ logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101

4.1. buk9515-100a buk9615-100a.pdf Size:70K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology whic

4.2. buk9614-30 1.pdf Size:50K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9614-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 69 A Thedevice features very

4.3. buk9510-55a buk9610-55a.pdf Size:327K _philips

BUK9611-55A
BUK9611-55A

BUK9510-55A; BUK9610-55A TrenchMOS™ logic level FET Rev. 01 — 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS™ technology Q101 compli

4.4. buk9516-55a buk9616-55a.pdf Size:102K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A ’trench’ technology which

4.5. buk9516-75b buk9616-75b.pdf Size:300K _philips

BUK9611-55A
BUK9611-55A

BUK95/9616-75B TrenchMOS™ logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistan

4.6. buk9510-100b buk9610-100b.pdf Size:342K _philips

BUK9611-55A
BUK9611-55A

BUK95/9610-100B TrenchMOS™ logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

4.7. buk95150-55a buk96150-55a.pdf Size:71K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A ’trench’ technology whic

4.8. buk9514-55a buk9614-55a.pdf Size:322K _philips

BUK9611-55A
BUK9611-55A

BUK9514-55A; BUK9614-55A TrenchMOS™ logic level FET Rev. 01 — 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 comp

4.9. buk9518-55a buk9618-55a.pdf Size:333K _philips

BUK9611-55A
BUK9611-55A

BUK9518-55A; BUK9618-55A TrenchMOS™ logic level FET Rev. 01 — 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS™ technology Q101 complia

4.10. buk95180-100a buk96180-100a.pdf Size:68K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A ’trench’ technology w

4.11. buk9618-30 1.pdf Size:50K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9618-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 55 A Thedevice features very

4.12. buk9610-30 1.pdf Size:52K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9610-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 75 A Thedevice features very

4.13. buk9614-55 1.pdf Size:56K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9614-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 68 A the device features ver

4.14. buk9618-55 1.pdf Size:55K _philips

BUK9611-55A
BUK9611-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9618-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 57 A the device features ver

Datasheet: BUK9607-30B , BUK9608-55A , BUK9608-55B , BUK9609-40B , BUK9609-55A , BUK9609-75A , BUK9610-100B , BUK9610-55A , IRF5305 , BUK9612-55B , BUK9614-55A , BUK9615-100A , BUK9616-55A , BUK9616-75B , BUK96180-100A , BUK9618-55A , BUK9620-100B .

 


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