All MOSFET. BUK9907-55ATE Datasheet

 

BUK9907-55ATE MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9907-55ATE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 272 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0062 Ohm

Package: TO2205

BUK9907-55ATE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9907-55ATE Datasheet (PDF)

1.1. buk9107-55ate buk9907-55ate.pdf Size:376K _philips

BUK9907-55ATE
BUK9907-55ATE

BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 — 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-55ATE in SOT426

2.1. buk9907-40atc.pdf Size:355K _philips

BUK9907-55ATE
BUK9907-55ATE

BUK9907-40ATC TrenchPLUS logic level FET Rev. 01 — 28 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9907-40ATC in S

Datasheet: BUK9675-100A , BUK9675-55A , BUK98150-55A , BUK98180-100A , BUK9832-55A , BUK9875-100A , BUK9880-55A , BUK9907-40ATC , BUK455-200A , BUK9C07-65BIT , BUK9C10-55BIT , BUK9C10-65BIT , BUK9E04-30B , BUK9E04-40A , BUK9E06-55A , BUK9E06-55B , BUK9E08-55B .

 


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