All MOSFET. PHB27NQ10T Datasheet

 

PHB27NQ10T MOSFET. Datasheet pdf. Equivalent

Type Designator: PHB27NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: D2PAK

PHB27NQ10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB27NQ10T Datasheet (PDF)

1.1. phb27nq10t phd27nq10t php27nq10t 1.pdf Size:118K _philips2

PHB27NQ10T
PHB27NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 28 A g RDS(ON) ? 50 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope usin

Datasheet: PH2520U , PH2925U , PH3120L , PHB110NQ08T , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , IRFP260 , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 .

 


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