All MOSFET. PHP191NQ06LT Datasheet

 

PHP191NQ06LT MOSFET. Datasheet pdf. Equivalent

Type Designator: PHP191NQ06LT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0037 Ohm

Package: TO220AB

PHP191NQ06LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP191NQ06LT Datasheet (PDF)

1.1. php191nq06lt phb191nq06lt.pdf Size:91K _philips2

PHP191NQ06LT
PHP191NQ06LT

PHP/PHB191NQ06LT N-channel TrenchMOS™ logic level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co

Datasheet: PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , 2SK2611 , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T , PHP27NQ11T , PHP28NQ15T , PHP29N08T , PHP30NQ15T .

 


PHP191NQ06LT
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