All MOSFET. APT1001R6BN Datasheet

 

APT1001R6BN MOSFET. Datasheet pdf. Equivalent

Type Designator: APT1001R6BN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 240 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 230 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO247

APT1001R6BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1001R6BN Datasheet (PDF)

1.1. apt1001r6bn.pdf Size:50K _apt

APT1001R6BN
APT1001R6BN

D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S APT1002R4BN 1000V 6.5A 2.40Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 1001R6BN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 8 6.5 Amps IDM Pulsed Drain Current 1

2.1. apt1001rsvr.pdf Size:71K _apt

APT1001R6BN
APT1001R6BN

APT1001RSVR 1000V 11A 1.000Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lowe

2.2. apt1001rbvfr.pdf Size:118K _apt

APT1001R6BN
APT1001R6BN

APT1001RBVFR APT1001RSVFR Ω 1000V 11A 1.00Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVFR also achieves faster switching speeds through optimized gate layou

 2.3. apt1001rbn.pdf Size:51K _apt

APT1001R6BN
APT1001R6BN

D TO-247 G APT1001RBN 1000V 11.0A 1.00Ω S APT5030BN 500V 21.0A 0.30Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 1001RBN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 11 Amps IDM Pulsed Drain Current 1 44 VGS Gate-Source Vo

2.4. apt1001r1bn.pdf Size:52K _apt

APT1001R6BN
APT1001R6BN

D TO-247 G APT1001R1BN 1000V 10.5A 1.10Ω S APT1001R3BN 1000V 10.0A 1.30Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 1001RBN 1001R3BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 10.5 10 Amps IDM Pulsed Drain Curren

 2.5. apt1001r1hvr.pdf Size:67K _apt

APT1001R6BN
APT1001R6BN

APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Low

2.6. apt1001rblc.pdf Size:34K _apt

APT1001R6BN
APT1001R6BN

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw

2.7. apt1001rslc.pdf Size:34K _apt

APT1001R6BN
APT1001R6BN

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw

2.8. apt1001rbvr.pdf Size:68K _apt

APT1001R6BN
APT1001R6BN

APT1001RBVR 1000V 11A 1.000Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lowe

2.9. apt1001r1avr.pdf Size:68K _apt

APT1001R6BN
APT1001R6BN

APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

2.10. apt1001r1bvfr.pdf Size:70K _apt

APT1001R6BN
APT1001R6BN

APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

Datasheet: APT1001R1HN , APT1001R1HVR , APT1001R2AN , APT1001R2BN , APT1001R2HN , APT1001R3AN , APT1001R3BN , APT1001R3HN , IRFP064N , APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , APT10025JVFR , APT10025JVR , APT10025PVR , APT10026JN .

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