All MOSFET. PSMN5R8-40YS Datasheet

 

PSMN5R8-40YS MOSFET. Datasheet pdf. Equivalent

Type Designator: PSMN5R8-40YS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0057 Ohm

Package: LFPAK

PSMN5R8-40YS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN5R8-40YS Datasheet (PDF)

1.1. psmn5r8-40ys.pdf Size:223K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R8-40YS N-channel LFPAK 40 V 5.7 m? standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

2.1. psmn5r8-30ll.pdf Size:396K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R8-30LL N-channel QFN3333 30 V 5.8 m? logic level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to l

4.1. psmn5r0-80ps.pdf Size:224K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R0-80PS N-channel 80 V 4.7 m? standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switch

4.2. psmn5r0-30yl.pdf Size:231K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R0-30YL N-channel 30 V 5 m? logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High

4.3. psmn5r6-100ps.pdf Size:217K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R6-100PS N-channel 100 V 5.6 m? standard level MOSFET in TO220 Rev. 03 2 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

4.4. psmn5r0-100es.pdf Size:238K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R0-100ES N-channel 100 V 5 m? standard level MOSFET in I2PAK Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

4.5. psmn5r5-60ys.pdf Size:251K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 m? standard level FET Rev. 02 24 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

4.6. psmn5r0-100ps.pdf Size:245K _philips2

PSMN5R8-40YS
PSMN5R8-40YS

PSMN5R0-100PS N-channel 100 V 5 m? standard level MOSFET in TO-220 Rev. 2 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due

Datasheet: PSMN5R0-100ES , PSMN5R0-100PS , PSMN5R0-30YL , PSMN5R0-80PS , PSMN5R5-60YS , PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , IRF8010 , PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL , PSMN6R0-30YLB , PSMN6R5-25YLC , PSMN6R5-80PS , PSMN7R0-100ES , PSMN7R0-100PS .

 


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