All MOSFET. STB80PF55 Datasheet

 

STB80PF55 MOSFET. Datasheet pdf. Equivalent

Type Designator: STB80PF55

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 80 A

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: D2PAK

STB80PF55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STB80PF55 Datasheet (PDF)

1.1. stb80pf55.pdf Size:175K _st

STB80PF55
STB80PF55

STB80PF55 P-CHANNEL 55V - 0.016 ? - 80A D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB80PF55 55 V < 0.018 ? 80 A TYPICAL RDS(on) = 0.016 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (Suffix “T4”) STMicroelectronis unique "Single

1.2. stb80pf55 stp80pf55.pdf Size:342K _st

STB80PF55
STB80PF55

STB80PF55 STP80PF55 P-channel 55 V, 0.016 ?, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP80PF55 55V <0.018? 80A STB80PF55 55V <0.018? 80A 3 ¦ Extremely dv/dt capability 3 2 1 1 ¦ 100% avalanche tested TO-220 D2PAK ¦ Application oriented characterization Application ¦ Switching applications Description Figure 1. Internal schematic diagram Thes

5.1. stb80nf55l.pdf Size:395K _st

STB80PF55
STB80PF55

STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX “T4”) TO-220

5.2. stb80ne03l-06.pdf Size:436K _st

STB80PF55
STB80PF55

STB80NE03L-06 N-channel 30V - 0.005? - 85A - D2PAK STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STB80NE03L-06 30V <0.006? 80A ¦ Exceptional dv/dt capability 3 1 ¦ Low gate charge 100°C ¦ 100% Avalanche tested D2PAK Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transis

5.3. stb80ne03l.pdf Size:84K _st

STB80PF55
STB80PF55

STB80NE03L-06 ? N - CHANNEL 30V - 0.005? - 80A - D2PAK STripFET? POWER MOSFET TYPE VDSS RDS(o n) ID STB80NE03L-06 30 V < 0.006 ? 80 A TYPICAL R = 0.005 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK TO-263 DESCRIPTION (suffix ”T4”) This Pow

5.4. stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf Size:195K _st

STB80PF55
STB80PF55

STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065? - 80A - TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008? 80 A STB80NF55L-08 55 V 0.008? 80 A STB80NF55L-08-1 55 V 0.008? 80 A 3 3 1 TYPICAL RDS(on) = 0.0065? 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCRIPTION This P

5.5. stb80nf10 stp80nf10.pdf Size:579K _st

STB80PF55
STB80PF55

STB80NF10 STP80NF10 N-channel 100 V, 0.012 ?, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF10 100 V < 0.015 ? 80 A STB80NF10 100 V < 0.015 ? 80 A 3 3 ¦ Exceptional dv/dt capability 2 1 1 ¦ 100% Avalanche tested TO-220 D?PAK ¦ Application oriented characterization Applications ¦ Switching applications Description Fi

5.6. stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf Size:362K _st

STB80PF55
STB80PF55

STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 ?, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V < 0.008 ? 80 A 2 3 1 2 STP80NF55-08 55 V < 0.008 ? 80 A 1 TO-247 TO-220 STW80NF55-08 55 V < 0.008 ? 80 A ¦ Standard threshold drive 3 Application 1 D?PAK ¦ Switching applications Description Figure 1.

5.7. stb80ne06-10.pdf Size:241K _st

STB80PF55
STB80PF55

STB80NE06-10 N-CHANNEL 60V - 0.085 ? - 80A D?PAK "SINGLE FEATURE SIZE™" POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STB80NE06-10 60 V < 0.01 ? 80 A FEATURES SUMMARY ¦ TYPICAL RDS(on) = 0.085 ? ¦ EXCEPTIONAL dv/dt CAPABILITY ¦ 100% AVALANCHE TESTED 3 1 ¦ APPLICATION ORIENTED CHARACTERIZATION TO-263 D2PAK ¦ FOR THROUGH-HOLE VERSION CONTACT (suffix

5.8. stp80nf06 stb80nf06 stw80nf06.pdf Size:308K _st

STB80PF55
STB80PF55

STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065? - 80A TO-220/D2PAK/TO-247 STripFET II™ Power MOSFET Features Type VDSS RDS(on) ID STB80NF06 60V <0.008? 80A 3 STP80NF06 60V <0.008? 80A 2 1 STW80NF06 60V <0.008? 80A TO-220 TO-247 ¦ 100% avalanche tested ¦ Low threshold drive 3 1 Description D?PAK This Power MOSFET is the latest development of STMicroelectronics unique "

5.9. stb80nf75l stp80nf75l.pdf Size:377K _st

STB80PF55
STB80PF55

STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 ? - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V <0.01 ? 80 A STB80NF75L 75 V <0.01 ? 80 A STB80NF75L-1 75 V <0.01 ? 80 A TYPICAL RDS(on) = 0.008 ? 3 3 1 2 EXCEPTIONAL dv/dt CAPABILITY 1 100% AVALANCHE TESTED D2PAK I2PAK TO-263 LOW THRESHOLD DRIVE TO-262 DESCRIPTION 3 This Pow

5.10. stb80nf12.pdf Size:501K _st

STB80PF55
STB80PF55

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP N-CHANNEL 120V-0.013?-80A TO-220/TO-247/TO-220FP/D?PAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID TO-220 TO-220FP STB80NF12 120 V <0.018 ? 80 A(*) STP80NF12 120 V <0.018 ? 80 A(*) STP80NF12FP 120 V <0.018 ? 80 A(*) STW80NF12 120 V <0.018 ? 80 A(*) 3 3 2 2 1 1 TYPICAL RDS(on) = 0.013? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

5.11. stb80nf03l-04t4.pdf Size:321K _st

STB80PF55
STB80PF55

STB80NF03L-04T4 N-channel 30 V, 0.0035 ?, 80 A D2PAK STripFET™ II Power MOSFET Features RDS(on) Type VDSS ID max STB80NF03L-04T4 30 V < 0.004 ? 80 A ¦ Exceptional dv/dt capability 3 1 ¦ 100% avalanche tested ¦ Low threshold drive D?PAK Application ¦ Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroel

5.12. stb80nf55-06.pdf Size:482K _st

STB80PF55
STB80PF55

STB80NF55-06 STP80NF55-06 STP80NF55-06FP N-CHANNEL 55V - 0.005 ? - 80A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-06 55 V <0.0065 ? 80 A STP80NF55-06 55 V <0.0065 ? 80 A STP80NF55-06FP 55 V <0.0065 ? 60 A TYPICAL RDS(on) = 0.005 ? 3 3 1 EXCEPTIONAL dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED D2PAK TO-220FP TO-263 APPLICATION ORIENTED (Suff

5.13. stb80n20m5 stp80n20m5.pdf Size:932K _st

STB80PF55
STB80PF55

STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 ?, 61 A, TO-220, D2PAK MDmesh™ V Power MOSFET Features VDSS @ RDS(on) Type ID TJmax max STB80N20M5 61 A 200 V < 0.023 ? STP80N20M5 61 A 3 2 3 1 1 ¦ Amongst the best RDS(on) * area ¦ High dv/dt capability TO-220 D2PAK ¦ Excellent switching performance ¦ Easy to drive ¦ 100% avalanche tested Application Figure 1. Internal schemati

5.14. stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf Size:447K _st

STB80PF55
STB80PF55

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005? - 80A - TO-220 /FP - I2PAK - D2PAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V <0.0065? 80A (1) 3 3 2 STB80NF55-06-1 55V <0.0065? 80A(1) 2 1 1 STP80NF55-06 55V <0.0065? 80A (1) TO-220 TO-220FP STP80NF55-06FP 55V <0.0065? 60A (1) 1. Limited by package ¦ Exceptiona

5.15. stb80nf55l-06 stp80nf55l-06.pdf Size:399K _st

STB80PF55
STB80PF55

STB80NF55L-06 STP80NF55L-06 N-CHANNEL 55V - 0.005 ? - 80A D?PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55L-06 55 V < 0.0065 ? 80 A STP80NF55L-06 55 V < 0.0065 ? 80 A TYPICAL RDS(on) = 0.005 ? LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 SURFACE-MOUNTING D2PAK (TO-263) 1 3 2 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 D2PAK IN TAPE & REEL (SUFFIX “T4”) TO-220

5.16. stb80l60 stp80l60.pdf Size:176K _samhop

STB80PF55
STB80PF55

Green Product STB/P80L60 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ High power and current handling capability. 60V 80A 8.0 @ VGS=10V TO-220 & TO-263 package. D G STP SERIES STB SERIES TO-220 TO-263(DD-P AK) S

Datasheet: STB7NK80Z-1 , STB80N20M5 , STB80NF03L-04 , STB80NF03L-04T4 , STB80NF10 , STB80NF55-08T4 , STB80NF55L-06 , STB80NF55L-08-1 , J310 , STB85NF3LL , STB85NF55 , STB8N65M5 , STB8NM60 , STB8NM60D , STB95N3LLH6 , STB9NK50Z , STB9NK60Z .

 


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