All MOSFET. APT10050JVFR Datasheet

 

APT10050JVFR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT10050JVFR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 450 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 595 pF

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: SOT227

APT10050JVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10050JVFR Datasheet (PDF)

1.1. apt10050jvr.pdf Size:68K _apt

APT10050JVFR
APT10050JVFR

APT10050JVR 1000V 19A 0.500Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

1.2. apt10050jlc.pdf Size:39K _apt

APT10050JVFR
APT10050JVFR

APT10050JLC Ω Ω 1000V 19A 0.500Ω Ω Ω TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, "UL Recognized" delivers exceptionally fast s

1.3. apt10050jvfr.pdf Size:71K _apt

APT10050JVFR
APT10050JVFR

APT10050JVFR 1000V 19A 0.500Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

1.4. apt10050jn.pdf Size:60K _apt

APT10050JVFR
APT10050JVFR

D G APT10050JN 1000V 20.5A 0.50Ω S ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT Symbol Parameter 10050JN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 20.5 Amps IDM, lLM

Datasheet: APT1004R2GN , APT1004RAN , APT1004RBN , APT1004RCN , APT1004RGN , APT1004RKN , APT10050B2VR , APT10050JN , IRF640N , APT10050JVR , APT10050LVFR , APT10050LVR , APT10057WVR , APT10086BVFR , APT10086BVR , APT10086SVR , APT10088HVR .

 


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